Alkyl group VA metal compounds
First Claim
1. A method of preparing a Group VA metal dihalide compound comprising the step of reacting a Group VA metal trihalide with a reagent selected from the group consisting of an (C1-C10)alkyl lithium compound and a compound of the formula RnM1X3−
- n wherein each R is (C1-C10)alkyl, amino-substituted (C1-C10)alkyl, aryl or substituted aryl, M1 is a Group IIIA metal, X is a halogen, and n is an integer from 1 to 3, in an organic solvent free of oxygen substitution.
1 Assignment
0 Petitions
Accused Products
Abstract
Disclosed are methods of preparing monoalkyl Group VA metal dihalide compounds in high yield and high purity by the reaction of a Group VA metal trihalide with an organo lithium reagent or a compound of the formula RnM1X3−n, where R is an alkyl, M1 is a Group IIIA metal, X is a halogen and n is an integer fro 1 to 3. Such monoalkyl Group VA metal dihalide compounds are substantially free of oxygenated impurities, ethereal solvents and metallic impurities. Monoalkyl Group VA metal dihydride compounds can be easily produced in high yield and high purity by reducing such monoalkyl Group VA metal dihalide compounds.
-
Citations
9 Claims
-
1. A method of preparing a Group VA metal dihalide compound comprising the step of reacting a Group VA metal trihalide with a reagent selected from the group consisting of an (C1-C10)alkyl lithium compound and a compound of the formula RnM1X3−
- n wherein each R is (C1-C10)alkyl, amino-substituted (C1-C10)alkyl, aryl or substituted aryl, M1 is a Group IIIA metal, X is a halogen, and n is an integer from 1 to 3, in an organic solvent free of oxygen substitution.
-
2. A method for preparing a Group VA metal dihalide compound comprising the step of reacting a Group VA metal trihalide with a reagent selected from the group consisting of an organo lithium compound and a compound of the formula RnM1X3−
- n wherein each R is (C1-C10) alkyl, amino-substituted (C1-C10)alkyl, aryl or substituted aryl, M1 is a Group IIIA metal, X is a halogen and n is an integer from 1 to 3, in the presence of a tertiary amine in an organic solvent free of oxygen substitution.
- View Dependent Claims (4)
- 3. A method for preparing Group VA metal dihydride compounds comprising the step of reducing a Group VA metal dihalide in the presence of a tertiary amine in an organic solvent wherein the organic solvent is free of oxygen substitution.
-
9. A method for depositing a film of a Group VA metal on a substrate comprising of the steps of:
- a) conveying a Group VA metal dihydride compound of the formula RMH2 or H2MR1 MH2 in the gaseous phase to a deposition chamber containing the substrate;
b) decomposing the Group VA metal compound in the deposition chamber; and
c) depositing a film of the Group VA metal on the substrate;
wherein the Group VA metal compound is substantially free of ethereal solvents; and
wherein R is (C1-C10)alkyl, amino-substituted (C1-C10)alkyl, aryl or substituted aryl;
R1 is (C1-C10)alkylene, (C8-C20)aralkylene or (C6-C20)arylene; and
M is arsenic or phosphorus.
- a) conveying a Group VA metal dihydride compound of the formula RMH2 or H2MR1 MH2 in the gaseous phase to a deposition chamber containing the substrate;
Specification