Wiring, TFT substrate using the same and LCD

• US 6,956,236 B1
• Filed: 12/08/1999
• Issued: 10/18/2005
• Est. Priority Date: 12/14/1998
• Status: Expired due to Term

• Current Assignee: LG Display Co., Ltd.
• Original Assignee: LG Philips LCD Company Limited (LG Display Co., Ltd.)
• Inventors: Chae, Gee Sung, Sasaki, Makoto
• Primary Examiner(s): Hu, Shouxiang
• Application Number:
  US09/555,625
• Time in Patent Office: 2,141 Days
• Field of Search: 257/59, 257/72, 257/762, 257/751, 257/753, 438/149, 438/151, 438/157, 438/163, 438/161, 438/166, 349/39, 349/42, 349/43, 349/47, 349/139, 349/45
• US Class Current: 257/72
• CPC Class Codes: G02F 1/136286 Wiring, e.g. gate line, drain line
• CPC Class Codes: G02F 1/13629 Multilayer wirings
• CPC Class Codes: G02F 1/136295 Materials; Compositions; Manufacture processes
• CPC Class Codes: H01L 23/53238 Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 29/41733 for thin film transistors with insulated gate
• CPC Class Codes: H01L 29/458 for thin film silicon, e.g. source or drain electrode
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/66765 Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A gate electrode (wiring) (40) having a Cu layer (40a) surrounded by a coating film (40b) made of titanium or titanium oxide; a TFT substrate (31) comprising the gate electrode (wiring) (40) and a LCD comprising a pair of opposing substrates and a liquid crystal disposed between the opposing substrates, wherein one of the pair of opposing substrates is a TFT substrate (31), are disclosed.

Claims

1. A wire in a gate electrode in a thin film transistor, comprising:

a Cu (Copper) layer having a bottom surface, a top surface and two side surfaces, wherein said bottom surface is on and in contact with a first coating film made of titanium, and the remaining three surfaces are coated by and in contact with a second coating film made of titanium oxide.

2. A TFT (thin film transistor) substrate having a wire as claimed in claim 1.

3. An LCD (liquid crystal display) comprising a pair of opposing substrates and a liquid crystal disposed between the opposing substrates, wherein at least one of the pair of opposing substrates is a TFT substrate as claimed in claim 2.