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Semiconductor light emitting device including photonic band gap material and luminescent material

  • US 6,956,247 B1
  • Filed: 05/26/2004
  • Issued: 10/18/2005
  • Est. Priority Date: 05/26/2004
  • Status: Active Grant
First Claim
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1. A structure comprising:

  • a semiconductor light emitting device including an active region capable of emitting first light having a first peak wavelength;

    a luminescent material disposed in the path of at least a portion of the first light, wherein the luminescent material is capable of emitting second light having a second peak wavelength; and

    a photonic band gap material disposed between the light emitting device and the luminescent material, wherein the photonic band gap material comprises a periodic variation in index of refraction in at least two dimensions, and wherein the photonic band gap material is capable of transmitting the first light and reflecting the second light.

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