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Semiconductor device and manufacturing method therefor

  • US 6,956,324 B2
  • Filed: 07/31/2001
  • Issued: 10/18/2005
  • Est. Priority Date: 08/04/2000
  • Status: Expired due to Term
First Claim
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1. A light emitting device comprising:

  • a substrate having a metallic surface;

    a first insulating film over the substrate having the metallic surface;

    at least one thin film transistor over the first insulating film;

    a second insulating film over the at least one thin film transistor;

    a light shielding film over the second insulating film; and

    a light emitting element over the light shielding film;

    said light emitting element including;

    an anode;

    a cathode; and

    an EL material interposed between the anode and the cathode; and

    wherein a thickness of the substrate having the metallic surface is in a range of 5 to 30 μ

    m, and wherein the light shielding film is made of a resin film.

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