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Measurement of critical dimensions of etched features

  • US 6,956,659 B2
  • Filed: 06/07/2002
  • Issued: 10/18/2005
  • Est. Priority Date: 05/22/2001
  • Status: Expired due to Fees
First Claim
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1. A method of determining a critical dimension associated with an etch process comprising:

  • forming a test mark in a device, wherein the test mark is formed at least in part by imaging overlapping, angularly offset lines in a resist that covers a selected layer to define the test mark and thereafter etching at least the selected layer to form the test mark;

    detecting at least a portion of the test mark to determine a geometric parameter of the test mark; and

    approximating a critical dimension of interest based at least in part on the determined geometric parameter of the test mark.

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