Epitaxial growth for waveguide tapering

• US 6,956,983 B2
• Filed: 05/31/2002
• Issued: 10/18/2005
• Est. Priority Date: 05/31/2002
• Status: Expired due to Fees

• Current Assignee: Intel Corporation
• Original Assignee: Intel Corporation
• Inventors: Morse, Michael T.
• Primary Examiner(s): Kim, Ellen E.
• Application Number:
  US10/159,238
• Publication Number:
  US 20030223671A1
• Time in Patent Office: 1,236 Days
• Field of Search: 385/14, 385 39- 43, 385129-132, 385/50
• US Class Current: 385/14
• CPC Class Codes: G02B 6/1228 Tapered waveguides, e.g. integrated spot-size transformers for coupling with fibres G02B6/305
• CPC Class Codes: G02B 6/131 by using epitaxial growth epitaxial growth for semiconductors H01L21/02365

Abstract

A method to form a semiconductor taper without etching the taper surfaces. In one embodiment, a semiconductor waveguide is formed on a workpiece having an unwatched top surface; e.g., using a silicone on insulator (SOI) wafer. A protective layer is formed on the waveguide. The protective layer is patterned and etched to form a mask that exposes a potion of the waveguide in the shape of the taper'"'"'s footprint. In one embodiment, selective silicone epitaxy is used to grow the taper on the exposed portion of the waveguide so that the taper is formed without etched surfaces. Micro-loading effects can cause the upper surface of the taper to slope toward the termination end of the taper.

Claims

1. An apparatus for propagating an optical signal, the apparatus comprising:

a semiconductor waveguide;

a first insulating layer disposed on at least a first surface of the semiconductor waveguide;

a second insulating layer disposed on at least a second surface of the semiconductor waveguide; and

a semiconductor taper abutting a portion of the second surface of the semiconductor waveguide, the semiconductor taper having a termination end and a longitudinal axis, wherein the termination end has at least one surface that is angled relative to the longitudinal axis, wherein the semiconductor taper includes silicon formed on a portion of the semiconductor waveguide left uncovered by the second insulating layer.

2. The apparatus of claim 1 wherein the silicon formed on the portion of the semiconductor waveguide left uncovered by the second insulating layer is epitaxially grown on the portion of the semiconductor waveguide left uncovered by the second insulating layer.

3. The apparatus of claim 2 wherein the semiconductor taper has a sloped surface relative to the second surface of the semiconductor waveguide.

4. The apparatus of claim 3 wherein the sloped surface of the semiconductor taper is an unetched surface.

5. The apparatus of claim 1 wherein the taper includes a second end to be coupled to an optical fiber.

6. The apparatus of claim 1 wherein the semiconductor taper is formed from semiconductor material formed on the second insulating layer and formed on the portion of the semiconductor waveguide left uncovered by the second insulating layer, wherein the semiconductor material is planarized to expose the second insulating layer.

7. An integrated circuit comprising:

a semiconductor waveguide;

a first insulating layer disposed on at least a first surface of the semiconductor waveguide;

a second insulating layer disposed on at least a second surface of the semiconductor waveguide; and

a semiconductor taper abutting a portion of the second surface of the semiconductor waveguide, the semiconductor taper having a longitudinal axis, a termination end and a wide end, the termination end having surface that is angled relative to the longitudinal axis, and the wide end to be coupled to an optical fiber, the semiconductor taper including silicon grown on a portion of the semiconductor waveguide left uncovered by the second insulating layer.

8. The circuit of claim 7 wherein the semiconductor waveguide is formed from silicon and the silicon grown on the portion of the semiconductor waveguide left uncovered by the second insulating layer is formed from silicon epitaxially grown on the portion of the semiconductor waveguide left uncovered by the second insulating layer.

9. The circuit of claim 8 wherein the semiconductor taper has a sloped surface relative to the second surface of the semiconductor waveguide.

10. The circuit of claim 9 wherein the sloped surface of the semiconductor taper is an unetched surface.

11. The circuit of claim 7 wherein the semiconductor taper is formed from semiconductor material formed on the second insulating layer and formed on the portion of the semiconductor waveguide left uncovered by the second insulating layer, wherein the semiconductor material is to expose the second insulating layer.

12. A system comprising:

an optical signal source;

an optical fiber optically coupled to the optical signal source to propagate an optical signal to be generated by the optical signal source; and

an integrated circuit optically coupled to the optical fiber to receive the optical signal generated by the optical signal source, the integrated circuit including;

a semiconductor waveguide;

a first cladding layer disposed on at least a first surface of the semiconductor waveguide;

a second cladding layer disposed on at least a second surface of the semiconductor waveguide; and

a semiconductor taper directly disposed on a portion of the second surface of the semiconductor waveguide, the semiconductor taper having a longitudinal axis, a termination end and a wide end, the termination end having a surface that is angled relative to the longitudinal axis, and the wide end coupled to the optical fiber, the semiconductor taper including silicon grown on a portion of the semiconductor waveguide left uncovered by the second cladding layer.

13. The system of claim 12 wherein the semiconductor waveguide is formed from silicon and the silicon grown on the portion of the semiconductor waveguide left uncovered by the second cladding layer is formed from silicon epitaxially grown on the portion of the semiconductor waveguide left uncovered by the second cladding layer.

14. The system of claim 12 wherein the semiconductor taper has a sloped surface relative to the second surface of the semiconductor waveguide.

15. The system of claim 14 wherein the sloped surface of the semiconductor taper is an unetched surface.