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Light-emitting apparatus

  • US 6,958,490 B2
  • Filed: 12/22/2003
  • Issued: 10/25/2005
  • Est. Priority Date: 12/27/2002
  • Status: Expired due to Fees
First Claim
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1. A light-emitting device comprisinga first electrode connected to a thin film transistor formed over a substrate having an insulating surface;

  • an insulator covering an edge portion of the first electrode;

    a layer containing an organic compound formed on the first electrode; and

    a second electrode formed on the layer containing the organic compound, wherein the first electrode includes an edge portion comprising a first layer, a second layer, a third layer, and a fourth layer, and a central portion comprising the first layer and the second layer, wherein the first electrode has an inclined plane between the edge portion and the central portion, and wherein the first layer comprises titanium, the second layer comprises titanium nitride, the third layer comprises aluminum or aluminum containing titanium, and the fourth layer comprises titanium.

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