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Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures

  • US 6,958,497 B2
  • Filed: 05/07/2002
  • Issued: 10/25/2005
  • Est. Priority Date: 05/30/2001
  • Status: Expired due to Term
First Claim
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1. A Group III nitride based light emitting diode, comprising:

  • a Group III nitride based superlattice comprising a gallium nitride based superlattice having at least two periods of alternating layers of InXGa1−

    X
    N and InYGa1−

    Y
    N, where 0≦

    X<

    1 and 0≦

    Y<

    1 and X is not equal to Y; and

    a Group III nitride based active region on the superlattice comprising at least one quantum well structure comprising;

    a first Group III nitride based barrier layer comprising a first well support layer comprising a Group III nitride;

    a first Group III nitride based quantum well layer on the first barrier layer; and

    a second Group III nitride based barrier layer on the first Group III nitride based quantum well layer comprising a first cap layer comprising a Group III nitride on the first quantum well layer;

    a second well support layer comprising a Group III nitride on the cap layer;

    a second quantum well layer comprising a Group III nitride on the second well support layer; and

    a second cap layer comprising a Group III nitride on the second quantum well layer; and

    wherein the cap layers have a lower crystal quality than the well support layers.

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