Methods of forming field effect transistors and field effect transistor circuitry

• US 6,958,519 B2
• Filed: 09/18/2001
• Issued: 10/25/2005
• Est. Priority Date: 02/27/1998
• Status: Expired due to Term

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Mouli, Chandra, Gonzalez, Fernando
• Primary Examiner(s): Kang, Donghee
• Application Number:
  US09/956,171
• Publication Number:
  US 20020017678A1
• Time in Patent Office: 1,498 Days
• Field of Search: 257/355, 257/363, 257/402, 257/271, 257/293, 257/510, 257/368, 257/392, 257/393, 326/101, 326/102, 326/103, 326/133, 327/534
• US Class Current: 257/402
• CPC Class Codes: H01L 27/0727 in combination with diodes, or capacitors or resistors

Abstract

Methods of forming field effect transistors and resultant field effect transistor circuitry are described. In one embodiment, a semiconductive substrate includes a field effect transistor having a body. A first resistive element is received by the substrate and connected between the transistor'"'"'s gate and the body. A second resistive element is received by the substrate and connected between the body and a reference voltage node. The first and second resistive elements form a voltage divider which is configured to selectively change threshold voltages of the field effect transistor with state changes in the gate voltage. In a preferred embodiment, first and second diode assemblies are positioned over the substrate and connected between the gate and body, and the body and a reference voltage node to provide the voltage divider.

Claims

1. Field effect transistor circuitry comprising:

a field effect transistor supported by a substrate and having a body within the substrate, the transistor having a gate;

a diode assembly supported by the substrate and connected between the gate, body and a reference voltage node; and

wherein the diode assembly comprises first and second diode assemblies positioned over the substrate.

2. The field effect transistor circuitry of claim 1, wherein the diode assembly comprise:

the first diode assembly supported by the substrate and connected between the gate and the body; and

the second diode assembly supported by the substrate and connected between the body and a reference voltage node.

3. The field effect transistor circuitry of claim 1 further comprising isolation regions and a buried mega eV layer formed within the substrate to collectively isolate the body.

4. The field effect transistor circuitry of claim 1, wherein the body is isolated at least partially with the substrate.

5. The field effect transistor circuitry of claim 1, wherein the diode assembly is not a Zener diode.

6. Field effect transistor circuitry comprising:

a field effect transistor supported by a substrate and having a body within the substrate, the transistor having a gate; and

a diode assembly supported by the substrate and connected between the body and a reference voltage node, the diode assembly forming a part of a voltage divider configured to selectively change threshold voltages of the field effect transistor with changes in the gate voltage.

7. The field effect transistor circuitry of claim 6, wherein the diode assembly comprises:

a first diode assembly connected between the gate and the body; and

a second diode assembly connected between the body and a reference voltage node, the first and second diode assemblies forming the voltage divider.

8. The field effect transistor circuitry of claim 7, wherein the gate comprises a conductive line which extends to the reference voltage node, and wherein the first and second ode assemblies are received by the conductive line.

9. The field effect transistor circuitry of claim 7, wherein:

the first diode assembly comprises a pair of diodes, each diode having an anode and a cathode, the cathodes being connected together; and

the second diode assembly comprises a pair of diodes, each diode having an anode and a cathode, the cathodes being connected together.

10. The field effect transistor circuitry of claim 9, wherein:

the anode of one diode of the first diode assembly is connected to the gate;

the anode of the other diode of the first diode assembly is connected to the body;

the anode of one diode of the second diode assembly is connected to the body; and

the anode of the other diode of the second diode assembly is connected to the reference voltage node.

11. The field effect transistor circuitry of claim 7, wherein:

the gate comprises a conductive line which extends to the reference voltage node, and wherein the first and second diode assemblies are received by the conductive line;

the first diode assembly comprises a pair of diodes, each diode having an anode and a cathode, the cathodes being connected together; and

the second diode assembly comprises a pair of diodes, each diode having an anode and a cathode, the cathodes being connected together.

12. The field effect transistor circuitry of claim 7, wherein:

the gate comprises a conductive line which extends to the reference voltage node, and wherein the first and second diode assemblies are received by the conductive line;

the first diode assembly comprises a pair of diodes, each diode having an anode and a cathode, the cathodes being connected together, the anode of one diode of the first diode assembly being connected to the gate, the anode of the other diode of the first diode assembly being connected to the body; and

the second diode assembly comprises a pair of diodes, each diode having an anode and a cathode, the cathodes being connected together, the anode of one diode of the second diode assembly being connected to the body, the anode of the other diode of the second diode assembly being connected to the reference voltage node.

13. Monolithic field effect transistor circuitry comprising:

a field effect transistor having a body, the transistor having a gate; and

a voltage divider circuit coupled to the gate and body, the circuit being configured to selectively change threshold voltages of the field effect transistor with changes in the gate voltage.

14. The monolithic field effect transistor circuitry of claim 13, wherein the voltage divider comprises a pair of resistive elements connected between the gate, the body, and a reference voltage node.

15. The monolithic field effect transistor circuitry of claim 13, wherein the voltage divider comprises a pair of diode assemblies connected between the gate, the body, and a reference voltage node.

16. The monolithic field effect transistor circuitry of claim 13, wherein:

the gate comprises a conductive line coupled to a reference voltage node; and

the voltage divider comprises a plurality of p-type and n-type regions disposed within the conductive line.

17. The monolithic field effect transistor circuitry of claim 16, wherein the plurality of p-type and n-type regions are arranged within the conductive line to provide the first and second diode assemblies.

18. The monolithic field effect transistor circuitry of claim 13, wherein the voltage divider circuit comprises:

a first diode assembly supported by the substrate and connected between the gate and the body; and

a second diode assembly supported by the substrate and connected between the body and a reference voltage node.

19. Field effect transistor circuitry comprising:

a silicon substrate;

a field effect transistor supported by the substrate and having a body within the substrate, the transistor having a gate;

a diode assembly supported by the substrate and connected between the gate, body and a reference voltage node; and

wherein the diode assembly comprises first and second diode assemblies positioned over the substrate.

20. The field effect transistor circuitry of claim 19, wherein the gate comprises a conductive line which extends to the reference voltage node, and wherein the first and second diode assemblies are received by the conductive line.

21. The field effect transistor circuitry of claim 19, wherein:

the first diode assembly comprises a pair of diodes, each diode having an anode and a cathode, the cathodes being connected together; and

the second diode assembly comprises a pair of diodes, each diode having an anode and a cathode, the cathodes being connected together.

22. The field effect transistor circuitry of claim 21, wherein:

the anode of one diode of the first diode assembly is connected to the gate;

the anode of the other diode of the first diode assembly is connected to the body;

the anode of one diode of the second diode assembly is connected to the body; and

the anode of the other diode of the second diode assembly is connected to the reference voltage node.

23. The field effect transistor circuitry of claim 19 further comprising isolation regions and a buried mega eV layer formed within the substrate to collectively isolate the body.

24. The field effect transistor circuitry of claim 19, wherein the body is isolated at least partially from the substrate.

25. The field effect transistor circuitry of claim 19, wherein the diode assembly is not a Zener diode.

26. Field effect transistor circuitry comprising:

a silicon semiconductive substrate;

a field effect transistor supported by the substrate and having a body within the substrate, the transistor having a gate; and

a diode assembly supported by the substrate and connected between the body and a reference voltage node, the diode assembly forming a part of a voltage divider configured to selectively change threshold voltages of the field effect transistor with changes in the gate voltage.

27. Field effect transistor circuitry comprising:

a field effect transistor supported by a substrate and having a body within the substrate, the transistor having a gate;

a diode assembly supported by the substrate and connected between the gate, body and a reference voltage node; and

wherein the diode assembly comprises;

a first diode assembly supported by the substrate and connected between the gate and the body; and

a second diode assembly supported by the substrate and connected between the body and reference voltage node.

28. Field effect transistor circuitry comprising:

a field effect transistor supported by a substrate and having a body within the substrate, the transistor having a gate;

a diode assembly supported by the substrate and connected between the gate, body and a reference voltage node;

wherein the diode assembly is not a Zener; and

wherein the diode assembly is provided elevationally over a surface of the substrate.

29. The field effect transistor circuitry of claim 28 wherein the diode assembly is electrically coupled with the gate, the body and the reference voltage node.

30. The field effect transistor circuitry of claim 28 wherein the diode assembly comprises a plurality of diodes directly electrically connected with one another.

31. Field effect transistor circuitry comprising:

a silicon substrate;

a field effect transistor supported by the substrate and having a body within the substrate, the transistor having a gate;

a diode assembly supported by the substrate and connected between the gate, body and a reference voltage node, the diode assembly is directly connected to the reference voltage node; and

wherein the diode assembly is not a Zener diode.

32. The field effect transistor circuitry of claim 31 wherein the diode assembly is electrically coupled with the gate, the body and the reference voltage node.

33. The field effect transistor circuitry of claim 31 wherein the diode assembly comprise a plurality of diodes directly electrically connected with one another.

34. The field effect transistor circuitry of claim 31 wherein the diode assembly is provided elevationally over a surface of the substrate.