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Dual damascene interconnect structures having different materials for line and via conductors

  • US 6,958,540 B2
  • Filed: 06/23/2003
  • Issued: 10/25/2005
  • Est. Priority Date: 06/23/2003
  • Status: Active Grant
First Claim
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1. An interconnect structure formed on a substrate, the structure comprising:

  • a first layer of a first dielectric material having at least one first conductor embedded therein, the first conductor having a top surface coplanar with a top surface of the layer of dielectric material;

    a second layer of a second dielectric material overlying the first layer of dielectric material and having at least one second conductor embedded therein, the second conductor comprising at least one first portion and at least one second portion, wherein the first portion is in electrical contact with the first conductor, the second portion is overlying and in electrical contact with the first portion, the second portion has a lateral extent greater than that of the first portion, and the second portion has a top surface coplanar with a top surface of the second layer of dielectric material;

    a first conductive liner disposed on an underside and sidewalls of the first portion and the second portion of the second conductor; and

    a second liner disposed on an underside and sidewalls of only the first portion of the second conductor.

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