Electroluminescence display device
First Claim
Patent Images
1. An EL display device having a plurality of display pixels comprising:
- an EL element having an emissive layer between first and second electrodes, a thin film transistor having first and second conductive regions formed of a semiconductor film, one of said first and second conductive regions being connected to said EL element, wherein a light shielding film for shielding light emitted from said EL element is provided between said EL element and an interface between said one of conductive regions connected to said EL element and a channel of said thin film transistor, said light shielding film is conductive, and wherein said light shielding film is provided between said thin film transistor and said EL element disposed on said thin film transistor with an insulating film therebetween, and a second light shielding film provided between a transparent substrate on which said thin film transistor is formed and said thin film transistor.
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Abstract
An EL element and an interface between a channel and an impurity diffusion area of a thin film transistor provided in the vicinity of the EL element are spaced apart. A light shielding film is provided between the EL element and the interface. By providing such a space and/or the light shielding film, generation of a leak current, which would otherwise be caused by light emitted from the self-emissive EL element entering the TFT, is reliably prevented, thereby ensuring that emitted light is not brighter than a predetermined luminance.
72 Citations
10 Claims
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1. An EL display device having a plurality of display pixels comprising:
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an EL element having an emissive layer between first and second electrodes, a thin film transistor having first and second conductive regions formed of a semiconductor film, one of said first and second conductive regions being connected to said EL element, wherein a light shielding film for shielding light emitted from said EL element is provided between said EL element and an interface between said one of conductive regions connected to said EL element and a channel of said thin film transistor, said light shielding film is conductive, and wherein said light shielding film is provided between said thin film transistor and said EL element disposed on said thin film transistor with an insulating film therebetween, and a second light shielding film provided between a transparent substrate on which said thin film transistor is formed and said thin film transistor. - View Dependent Claims (2, 3)
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4. An EL display device having a plurality of display pixels comprising:
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an EL element having an emissive layer between first and second electrodes;
a first thin film transistor having a first conductive region formed of a semiconductor film and connected to a data line, a gate electrode connected to a gate line, and a second conductive region; and
a second thin film transistor having a third conductive region formed of a semiconductor film and connected to a power source line of said EL element, a second gate electrode connected to said second conductive region of said first thin film transistor, and a fourth conductive region connected to said EL element;
whereina light shielding film for shielding light emitted from said EL element is provided between said EL element and an interface between a channel and said fourth conductive region of said second thin film transistor. - View Dependent Claims (5, 6, 7)
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8. An EL display device having a plurality of display pixels comprising:
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an EL element having an emissive layer between first and second electrodes;
a first thin film transistor having a first conductive region formed of a semiconductor film and connected to a data line, a gate electrode connected to a gate line, and a second conductive region; and
a second thin film transistor having a third conductive region formed of a semiconductor film and connected to a power source line of said EL element, a second gate electrode connected to said second conductive region of said first thin film transistor, and a fourth conductive region connected to said EL element;
whereina light shielding film for shielding light emitted from said EL element is provided over the semiconductor film forming an active layer of said first thin film transistor and located between said active layer and said EL element. - View Dependent Claims (9, 10)
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Specification