Structure of an optical interference display unit

• US 6,958,847 B2
• Filed: 03/24/2004
• Issued: 10/25/2005
• Est. Priority Date: 01/20/2004
• Status: Expired due to Fees

• Current Assignee: Snaptrack Incorporated (Qualcomm, Inc.)
• Original Assignee: Prime View International Company Limited (E Ink Holdings Incorporated)
• Inventors: Lin, Wen-Jian
• Primary Examiner(s): Epps, Georgia
• Assistant Examiner(s): HASAN, MOHAMMED A
• Application Number:
  US10/807,143
• Publication Number:
  US 20050157364A1
• Time in Patent Office: 580 Days
• Field of Search: 359290-295, 359/224, 359/298, 445/24, 445/25
• US Class Current: 359/295
• CPC Class Codes: G02B 26/001 based on interference in an adjustable optical cavity interference filters G02B5/28; devices or arrangements using multiple reflections in spectrometry or monochromators G01J3/26

Abstract

An optical interference display unit, at least comprises a light-incidence electrode and a light-reflection electrode located on a transparent substrate. The light-incidence electrode at least comprises a transparent conductive layer and a dielectric layer. The light-reflection electrode at least comprises an absorption layer and a reflective layer.

Claims

1. A structure of an optical interference display unit comprising:

a light-incidence electrode including;

a transparent conductive layer; and

an optical film on the transparent conductive layer;

a light-reflection electrode including;

a light absorbing layer; and

a reflective layer on the light absorbing layer; and

at least two supporters for supporting the light-incidence electrode and the light-reflection electrode wherein a cavity is formed between the light-incidence electrode and the light-reflection electrode.

2. The structure of an optical interference display unit according to claim 1, wherein the optical interference display unit is formed on a transparent substrate.

3. The structure of an optical interference display unit according to claim 1, wherein the material of the transparent conductive layer is selected from the group consisting of indium tin oxide, indium-doped zinc oxide, zinc oxide, indium oxide or a mixture thereof.

4. The structure of an optical interference display unit according to claim 1, wherein the optical film is a dielectric film.

5. The structure of an optical interference display unit according to claim 4, wherein the dielectric film is made of silicon oxide, silicon nitride or metal oxide.

6. The structure of an optical interference display unit according to claim 1, wherein the light absorbing layer is made of metal.

7. The structure of an optical interference display unit according to claim 6, wherein the metal is chromium, molybdenum, chromium/molybdenum alloy, chromium alloy, or molybdenum alloy.

8. The structure of an optical interference display unit according to claim 1, wherein the reflective layer is made of metal.

9. The structure of an optical interference display unit according to claim 8, wherein the metal is silver, aluminum, silver alloy or aluminum alloy.

10. The structure of an optical interference display unit according to claim 1, wherein the light-reflection electrode further comprises a mechanical stress adjusting layer on the reflective layer.

11. A structure of an optical interference display unit comprising:

a light-incidence electrode including;

a transparent conductive layer; and

a dielectric layer on the transparent conductive layer;

a light-reflection electrode including;

a metal layer; and

a reflective layer on the metal layer;

a mechanical stress adjusting layer on the reflective layer; and

at least two supporters for supporting the light-incidence electrode and the light-reflection electrode wherein a cavity is formed between the light-incidence electrode and the light-reflection electrode.

12. The structure of an optical interference display unit according to claim 11, wherein the optical interference display unit is formed on a transparent substrate.

13. The structure of an optical interference display unit according to claim 11, wherein the material of the transparent conductive layer is selected from the group consisting of indium tin oxide, indium-doped zinc oxide, zinc oxide, indium oxide or a mixture thereof.

14. The structure of an optical interference display unit according to claim 11, wherein the dielectric layer is made of silicon oxide, silicon nitride or metal oxide.

15. The structure of an optical interference display unit according to claim 11, wherein the metal layer is made from chromium, molybdenum, chromium/molybdenum alloy, chromium alloy, or molybdenum alloy.

16. The structure of an optical interference display unit according to claim 11, wherein the reflective layer is made of metal.

17. The structure of an optical interference display unit according to claim 16, wherein the metal is silver, aluminum, silver alloy or aluminum alloy.