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Magnetic element utilizing spin-transfer and half-metals and an MRAM device using the magnetic element

  • US 6,958,927 B1
  • Filed: 10/09/2002
  • Issued: 10/25/2005
  • Est. Priority Date: 10/09/2002
  • Status: Expired due to Term
First Claim
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1. A magnetic element, comprising:

  • a pinned layer and having a first magnetization that is pinned in a first direction;

    a half-metallic material layer formed on the pinned layer;

    a spacer layer formed on the half-metallic material layer, the spacer layer being nonmagnetic and conductive; and

    a free layer formed on the spacer layer, the free layer having a second magnetization that changes direction based on the spin-transfer effect when a write current passes through the magnetic element.

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