Method and apparatus for monitoring integrated circuit fabrication

• US 6,959,255 B2
• Filed: 01/13/2004
• Issued: 10/25/2005
• Est. Priority Date: 11/04/2002
• Status: Active Grant

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: Brion Technologies Incorporated (ASML Holding NV)
• Inventors: Ye, Jun, Chen, Xun
• Primary Examiner(s): Raymond, Edward
• Application Number:
  US10/756,718
• Publication Number:
  US 20040148120A1
• Time in Patent Office: 651 Days
• Field of Search: 702/116, 702/117, 702/132, 702/136, 702/184, 702/185, 438/5, 438/10, 438/11, 438/14, 438/17, 438/18, 156/345.13
• US Class Current: 702/117
• CPC Class Codes: G01D 9/005 Solid-state data loggers
• CPC Class Codes: H01L 21/67253 Process monitoring, e.g. flow or thickness monitoring
• CPC Class Codes: H01L 21/67276 Production flow monitoring, e.g. for increasing throughput program-control systems per se G05B19/00, e.g. total factory control G05B19/418
• CPC Class Codes: H01L 22/34 Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line switching, multiplexing, gating devices G01R19/25; process control with lithography, e.g. dose control, G03F7/20; structures for alignment control by optical means G03F7/70633
• CPC Class Codes: H01L 2224/48463 the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
• CPC Class Codes: H01L 2224/49107 on the semiconductor or solid-state body
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/13091 Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/3011 Impedance

Abstract

In one aspect, the present invention is a sensor unit for sensing process parameters of a process to manufacture an integrated circuit using integrated circuit processing equipment. In one embodiment, the sensor unit includes a substrate having a wafer-shaped profile and a first sensor, disposed on or in the substrate, to sample a first process parameter. The sensor unit of this embodiment also includes a second sensor, disposed on or in the substrate, to sample a second process parameter wherein the second process parameter is different from the first process parameter. In one embodiment, the sensor unit includes a first source, disposed on or in the substrate, wherein first source generates an interrogation signal and wherein the first sensor uses the interrogation signal from the first source to sample the first process parameter. The sensor unit may also include a second source, disposed on or in the substrate, wherein second source generates an interrogation signal and wherein the second sensor uses the interrogation signal from the second source to sample the second process parameter. The first sensor and the first source may operate in an end-point mode or in a real-time mode. In this regard, the first sensor samples the first parameter periodically or continuously while the sensor unit is disposed in the integrated circuit processing equipment and undergoing processing. In one embodiment, the first sensor is a temperature sensor and the second sensor is a pressure sensor, a chemical sensor, a surface tension sensor or a surface stress sensor.

Claims

1. An EIW unit for use in sensing a process parameter of a process to manufacture an integrated circuit using integrated circuit processing equipment, the EIW unit comprising:

a substrate having a wafer-shaped profile;

a plurality of light sources, disposed on or in the substrate, to output light to permit sampling of a process parameter of the process performed by the integrated circuit processing equipment; and

a predetermined surface layer disposed above the plurality of light sources and capable of receiving a surface structure thereon, wherein the surface structure is formed by the integrated circuit processing equipment during processing.

2. The EIW unit of claim 1 wherein the predetermined surface layer is patterned to guide or shape the light output by the plurality of light sources.

3. The EIW unit of claim 1 wherein the predetermined surface layer includes a grating structure.

4. The EIW unit of claim 3 wherein the refractive index of the grating structure is capable of being changed dynamically.

5. The EIW unit of claim 3 wherein the EIW unit further includes an acoustic modulation module disposed in or on the substrate to control the refractive index of the grating structure.

6. The EIW unit of claim 1 wherein the plurality of light sources operates in an end-point mode.

7. The EIW unit of claim 1 wherein the plurality of light sources operates in a real-time mode.

8. The EIW unit of claim 1 wherein predetermined surface layer includes a plurality of layers.

9. The EIW unit of claim 8 wherein the plurality of layers includes a composite dielectric structure.

10. The EIW unit of claim 1 wherein the plurality of light sources output light at different wavelengths.

11. The EIW unit of claim 10 further including a plurality of light sensors, disposed in or on the substrate wherein the light sensors sample light that is reflected or scattered by the surface structure formed by the integrated circuit processing equipment during processing.

12. The EIW unit of claim 1 wherein the intensity of the light output by the plurality of light sources may be varied or modulated.

13. The EIW unit of claim 1 wherein the intensity of the light output of a first light source of the plurality of light sources may be varied or modulated relative to another light source of the plurality of light sources.

14. The EIW unit of claim 1 wherein the plurality of light sources is VCSELs or LEDs.

15. The EIW unit of claim 1 further including a plurality of light sensors, disposed in or on the substrate, wherein the light sensors sample light that is reflected or scattered by the surface structure.

16. The EIW unit of claim 15 wherein the plurality of light sensors are CMOS devices, charge coupled devices, or photodiodes.

17. The EIW unit of claim 15 wherein the plurality of light sensors periodically or continuously sample the intensity of the light while the EIW unit is disposed in the integrated circuit processing equipment and undergoing processing.

18. The EIW unit of claim 17 further including data storage, coupled to the plurality of light sensors, to store data which is representative of the parameter.

19. The EIW unit of claim 17 further including:

communication circuitry to provide the data which is representative of the parameter to external circuitry; and

at least one rechargeable battery, to provide electrical power to the communication circuitry.

20. The EIW unit of claim 17 wherein the plurality of light sensors sample the intensity of reflected or scattered light.

21. A method of measuring a process parameter of an integrated circuit manufacturing process using an EIW unit having a substrate, which includes a wafer-shaped profile, a plurality of light sources disposed on or in the substrate, and a predetermined surface layer disposed above the plurality of light sources, the method comprising:

placing the substrate into the integrated circuit processing equipment;

performing the integrated circuit manufacturing process wherein a surface structure forms on or in the predetermined surface layer during the manufacturing process;

enabling the plurality of light sources to output light;

sampling the response to the light output by the plurality of light sources; and

determining the process parameter using the sampled response.

22. The method of claim 21 further including changing the refractive index of the predetermined surface layer.

23. The method of claim 21 further including dynamically changing the refractive index of the predetermined surface layer while performing the integrated circuit manufacturing process.

24. The method of claim 21 wherein the response to the light output by the plurality of light sources is sampled after performing the integrated circuit manufacturing process.

25. The method of claim 21 wherein the response to the light output by the plurality of light sources is sampled while performing the integrated circuit manufacturing process.

26. The method of claim 21 wherein the plurality of light sources output light at different wavelengths.

27. The method of claim 21 wherein the EIW unit further includes a plurality of light sensors, disposed in or on the substrate, and wherein the plurality of light sensors sample the response to the light output by the plurality of light sources.

28. The method of claim 21 wherein sampling the response to the light output by the plurality of light sources includes sampling the light that is reflected or scattered by the surface structure formed by the integrated circuit processing equipment during processing.

29. The method of claim 21 further including varying the intensity of the light output by the plurality of light sources.

30. The method of claim 21 further including varying the intensity of the light output of a first light source of the plurality of light sources relative to another light source of the plurality of light sources.

31. The method of claim 21 wherein the EIW unit further includes a plurality of light sensors, disposed in or on the substrate, and wherein the plurality of light sensors periodically or continuously sample the response to the light output by the plurality of light sources while performing the integrated circuit manufacturing process.

32. The method of claim 31 wherein the EIW unit further includes a data storage, disposed in or on the substrate, and wherein the method further includes storing the response to the light output by the plurality of light sources in the data storage.

33. The method of claim 31 wherein the EIW unit further includes communication circuitry, disposed in or on the substrate, and wherein the method further includes communicating the response to the light output by the plurality of light sources.

34. The method of claim 21 further including sampling the intensity of the reflected or scattered light using a plurality of light sensors.

35. The method of claim 34 wherein the plurality of light sensors is disposed on or in the substrate of the EIW unit.

36. The method of claim 35 further including varying the intensity of the light output by the plurality of light sources.

37. The method of claim 35 further including varying the intensity of the light output of a first light source of the plurality of light sources relative to another light source of the plurality of light sources.

38. The method of claim 35 further including periodically or continuously sampling the response to the light output by the plurality of light sources while performing the integrated circuit manufacturing process.

39. The method of claim 35 further including sampling the response to the light output by the plurality of light sources after performing the integrated circuit manufacturing process.

40. The method of claim 35 further including changing the refractive index of the predetermined surface layer.

41. The method of claim 35 further including dynamically changing the refractive index of the predetermined surface layer while performing the integrated circuit manufacturing process.

42. The method of claim 21 wherein the process parameter is a thickness of the surface structure.

43. The method of claim 21 wherein the process parameter is a spatial distribution of a surface structure.

44. A system for sensing process parameters of a process for manufacturing an integrated circuit using integrated circuit processing equipment, the system comprising:

an EIW unit, including;

substrate having a wafer-shaped profile; and

a source, disposed on or in the substrate, to output interrogation signals;

a sensor to sample the interrogation signals while or after the EIW unit is subjected to processing by the integrated circuit processing equipment; and

a computing device to receive the sampled interrogation signals from the sensor and determine the process parameter using the sampled interrogation signals.

45. The system of claim 44 wherein the source is a VCSEL or LED.

46. The system of claim 45 wherein the sensor is a CMOS device, charge coupled device, or photodiode.

47. The system of claim 44 wherein the process parameter is the surface profile.

48. The system of claim 44 wherein the sensor is disposed on or in the substrate.

49. The system of claim 48 further including communications circuitry disposed on the substrate, wherein the communications circuitry is coupled to the sensor to provide the sampled interrogation signals to the computing device.

50. The system of claim 44 wherein the sensor operates in an end-point mode.

51. The system of claim 44 wherein the sensor operates in a real-time mode.

52. The system of claim 44 wherein the EIW unit further includes a predetermined surface layer disposed above the source, and wherein the source is a plurality of light sources that output light at different wavelengths.

53. The system of claim 52 wherein the sensor is a plurality of light sensors wherein the light sensors sample light that is reflected or scattered by a surface structure formed by the integrated circuit processing equipment during processing.

54. The system of claim 53 wherein the plurality of light sensors is disposed in or on the substrate.

55. The system of claim 53 wherein the predetermined surface layer is patterned to guide or shape the light output by the plurality of light sources.

56. The system of claim 53 wherein the predetermined surface layer includes a grating structure.

57. The system of claim 56 wherein the refractive index of the grating structure is capable of being changed dynamically.

58. The system of claim 56 wherein the EIW unit further includes an acoustic modulation module disposed in or on the substrate to control the refractive index of the grating structure.

59. The system of claim 52 wherein the sensor and source operate in an end-point mode.

60. The system of claim 52 wherein the sensor and source operate in a real-time mode.

61. The system of claim 52 wherein predetermined surface layer includes a plurality of layers.

62. The system of claim 61 wherein the plurality of layers includes a composite dielectric structure.

63. The system of claim 52 wherein the intensity of the light output by the plurality of light sources may be varied or modulated.

64. The system of claim 52 wherein the intensity of the light output of a first light source of the plurality of light sources may be varied or modulated relative to another light source of the plurality of light sources.

65. The system of claim 44 wherein the computing device determines the thickness of a surface layer formed by the integrated circuit processing equipment during processing.

66. The system of claim 44 wherein the computing device determines the spatial distribution of a surface layer formed by the integrated circuit processing equipment during processing.