Method for structuring an OFET

• US 6,960,489 B2
• Filed: 08/29/2001
• Issued: 11/01/2005
• Est. Priority Date: 09/01/2000
• Status: Expired due to Fees

• Current Assignee: PolyIC GmbH & Co. KG (Leonhard KURZ Stiftung & Company KG)
• Original Assignee: Siemens AG
• Inventors: Rost, Henning, Bernds, Adolf, Clemens, Wolfgang, Fix, Walter
• Primary Examiner(s): Kang, Donghee
• Application Number:
  US10/362,932
• Publication Number:
  US 20030183817A1
• Time in Patent Office: 1,525 Days
• Field of Search: 438/82, 438/99, 438/142, 438/149, 438/151, 438/154, 438/197, 257/40, 257/411, 257/412, 257/410
• US Class Current: 438/99
• CPC Class Codes: H10K 10/46 Field-effect transistors, e.g. organic thin-film transistors [OTFT] H10K10/43 takes precedence
• CPC Class Codes: H10K 71/13 using printing techniques, e.g. ink-jet printing or screen printing

Abstract

The invention relates to an organic field effect transistor, a method for structuring an OFET and an integrated circuit with improved structuring of the functional polymer layers. Structuring is achieved by scraping the functional polymer into a mold layer in which recesses are initially produced by exposure.

Claims

1. A method for structuring an organic field effect transistor (OFET) comprising:

forming a negative mold having at least one recess defining at least a portion of the OFET; and

scraping at least one functional polymer into the at least one recess to thereby form said portion.

2. The method as claimed in claim 1, comprising the following operations:

a) a mold layer for a negative mold is applied to a substrate or a lower layer,

b) this mold layer acquires a plurality of said recesses which correspond to the negatives of the subsequent structures and

c) the functional polymer is then scraped into these recesses.

3. The method as claimed in claim 2, in which the mold layer is removed after the structuring.

4. The method as claimed in claim 2, in which the functional polymer is scraped at least twice into the recesses of the mold layer.

5. The method as claimed in claim 2, in which the recesses in the mold layer are produced by irradiation using a mask.

6. The method as claimed in claim 2, which is carried out as a continuous method using a continuously moving belt.

7. The method as claimed in claim 1, in which the mold layer is removed after the structuring.

8. The method as claimed in claim 7, in which the functional polymer is scraped at least twice into the recesses of the mold layer.

9. The method as claimed in claim 7, in which the recesses in the mold layer are produced by irradiation using a mask.

10. The method as claimed in claim 7, which is carried out as a continuous method using a continuously moving belt.

11. The method as claimed in claim 1, in which the functional polymer is scraped at least twice into the recesses of the mold layer.

12. The method as claimed in claim 11, in which the recesses in the mold layer are produced by irradiation using a mask.

13. The method as claimed in claim 11, which is carried out as a continuous method using a continuously moving belt.

14. The method as claimed in claim 1, in which the recesses in the mold layer are produced by irradiation using a mask.

15. The method as claimed in claim 14, which is carried out as a continuous method using a continuously moving belt.

16. The method as claimed in claim 1, which is carried out as a continuous method using a continuously moving belt.