Method of measuring the performance of a scanning electron microscope

• US 6,960,764 B2
• Filed: 07/19/2002
• Issued: 11/01/2005
• Est. Priority Date: 07/26/2001
• Status: Expired due to Fees

• Current Assignee: Koninklijke Philips Electronics N.V. (Koninklijke Philips N.V.)
• Original Assignee: Koninklijke Philips Electronics N.V. (Koninklijke Philips N.V.)
• Inventors: Dirksen, Peter, Juffermans, Casparus Anthonius Henricus, Elfrink, Rene Johan Gerrit
• Primary Examiner(s): Lee, John R.
• Assistant Examiner(s): Gurzo, Paul M.
• Application Number:
  US10/482,200
• Publication Number:
  US 20040173748A1
• Time in Patent Office: 1,201 Days
• Field of Search: 250/307, 250/311
• US Class Current: 250/307
• CPC Class Codes: H01J 2237/2823 Resolution
• CPC Class Codes: H01J 37/263 Contrast, resolution or power of penetration
• CPC Class Codes: H01J 37/28 with scanning beams H01J37/268, H01J37/292, H01J37/2955 take precedence

Abstract

The performance of a scanning electron microscope (SEM) (10) is determined by scanning, with this SEM, porous silicon surface areas (PS_F, PS_C) each having a different average pore size, calculating the Fourier transform spectra (F_c) of the images of the surface areas and extrapolating the resolution (R) at a zero signal-to-noise ratio (SNR) from the width (W(1/e)), the signal amplitude (Sa) and the noise offset (NL) of the spectra. A test sample provided with the different surface areas is obtained by anodizing a silicon substrate (Su) at a constant electric current, while continuously decreasing the substrate area exposed to the etching electrolyte (El).

Claims

1. A method of determining the imaging quality of a scanning electron microscope used for measuring sizes of device features configured in a substrate layer during manufacture of devices, the method comprising the steps of:

providing porous silicon surface areas;

scanning the surface areas by means of the scanning electron microscope;

analyzing the images taken by the scanning electron microscope by means of a Fast Fourier Transform technique to obtain an indication of the resolution of the scanning electron microscope, wherein the step of scanning the surface areas and the step of obtaining the resolution, respectively, comprise;

taking images of a number of surface structures having different average pore sizes;

calculating the Fourier spectrum of each of these images, and determining the resolution of the scanning electron microscope by extrapolating the resolution belonging to a signal to noise ratio of zero from the width, the signal amplitude and the noise offset of the Fourier spectrum of all of said images.

2. A method as recited in claim 1, wherein the step of taking images comprises scanning of porous silicon surface areas of a number of separate substrates, each of which has a different average pore size.

3. A method as recited in claim 1, wherein the step of taking images comprises scanning of a single substrate provided with a porous silicon surface having an average pore size which increases continuously in one direction from a small size to a larger size.

4. A method as recited in claim 3, wherein use is made of a substrate, the porous surface of which is provided with an additional pattern of features having dimensions which are substantially larger than the pore sizes.