×

Method of forming an oxide film

  • US 6,960,812 B2
  • Filed: 06/12/2003
  • Issued: 11/01/2005
  • Est. Priority Date: 02/06/1990
  • Status: Expired due to Fees
First Claim
Patent Images

1. A semiconductor device comprising:

  • a substrate comprising plastic;

    a semiconductor layer over the substrate comprising plastic;

    a gate insulating film comprising silicon oxide over the semiconductor layer;

    a gate electrode over the gate insulating film; and

    source and drain electrodes over the semiconductor layer, wherein the gate insulating film comprises fluorine and the proportion of fluorine/silicon in the gate insulating film is 5 atom % or less, and wherein the gate electrode and the source and drain electrodes comprise aluminum.

View all claims
  • 0 Assignments
Timeline View
Assignment View
    ×
    ×