System and method for sensing a magnetic field
First Claim
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1. A magnetic field sensor, comprising:
- a base region;
an emitter region, wherein the emitter region is disposed in the base region; and
a collector region, wherein the collector region is disposed in the base region; and
a barrier region disposed between the emitter region and the collector region to hamper charge carriers injected into the base region from the emitter region from reaching at least a portion of the collector region, and wherein the barrier region is further disposed in the base region.
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Abstract
A magnetic field sensor includes a transistor device having a base region, an emitter region, and a collector region. A barrier region disposed between the emitter region and the collector region to hamper charge carriers injected into the base region from the emitter region from reaching at least a portion of the collector region. The magnetic field sensor further includes a first voltage source to bias the collector region with respect to the base region to form a space-charge layer associated with the collector region.
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Citations
10 Claims
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1. A magnetic field sensor, comprising:
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a base region;
an emitter region, wherein the emitter region is disposed in the base region; and
a collector region, wherein the collector region is disposed in the base region; and
a barrier region disposed between the emitter region and the collector region to hamper charge carriers injected into the base region from the emitter region from reaching at least a portion of the collector region, and wherein the barrier region is further disposed in the base region.
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2. A magnetic field sensor comprising:
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a transistor device including;
a base region;
an emitter region;
a collector region;
a barrier region disposed between the emitter region and the collector region to hamper charge carriers injected into the base region from the emitter region from reaching at least a portion of the collector region;
a first biasing source to bias the collector region with respect to the base region to form a space-charge layer associated with the collector region; and
a second biasing source to bias the barrier region with respect to the base region to control the space-charge layer associated with the barrier region. - View Dependent Claims (3, 4)
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5. A magnetic field sensor comprising:
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a transistor device comprising;
a base region;
an emitter region;
a collector region;
a barrier region disposed between the emitter region and the collector region to hamper charge carriers injected into the base region from the emitter region from reaching at least a portion of the collector region;
a substrate region;
a parasitic collector region; and
wherein the parasitic collector region is disposed between the base region and the substrate region. - View Dependent Claims (6, 7)
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8. A magnetic field sensor, comprising
a transistor device including: -
a base region;
an emitter region;
a collector region; and
a barrier region disposed between the emitter region and the collector region to hamper charge carriers injected into the base region from the emitter region from reaching at least a portion of the collector region;
wherein the base region is a first conductivity type and wherein the emitter region is a second conductivity type and the collector region is the second conductivity type. - View Dependent Claims (9, 10)
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Specification