Structure and method for fabrication of a leadless chip carrier

• US 6,960,824 B1
• Filed: 06/11/2001
• Issued: 11/01/2005
• Est. Priority Date: 11/15/2000
• Status: Expired due to Term

• Current Assignee: Skyworks Solutions Incorporated
• Original Assignee: Skyworks Solutions Incorporated
• Inventors: Cote, Kevin, Hashemi, Hassan S.
• Primary Examiner(s): Owens, Douglas W.
• Application Number:
  US09/878,815
• Time in Patent Office: 1,604 Days
• Field of Search: 257/713, 257/706, 257/774, 257/690, 257/698, 257/735, 361/768, 361/767, 361/783
• US Class Current: 257/698
• CPC Class Codes: H01L 2223/6677 for antenna, e.g. antenna included within housing of semiconductor device
• CPC Class Codes: H01L 2224/16237 the bump connector connecting to a bonding area disposed in a recess of the surface of the item
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48228 the bond pad being disposed in a recess of the surface of the item
• CPC Class Codes: H01L 2224/48235 connecting the wire to a via metallisation of the item
• CPC Class Codes: H01L 2224/48237 connecting the wire to a die pad of the item
• CPC Class Codes: H01L 2224/49171 Fan-out arrangements
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 23/3677 Wire-like or pin-like cooling fins or heat sinks
• CPC Class Codes: H01L 23/49827 Via connections through the substrates, e.g. pins going through the substrate, coaxial cables H01L23/49822, H01L23/49833, H01L23/4985, H01L23/49861 take precedence
• CPC Class Codes: H01L 23/49838 Geometry or layout
• CPC Class Codes: H01L 23/64 Impedance arrangements
• CPC Class Codes: H01L 23/645 Inductive arrangements H01L23/647, H01L23/66 take precedence
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/49 : of a plurality of wire connectors
• CPC Class Codes: H01L 25/0655 : the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01027 : Cobalt [Co]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01042 : Molybdenum [Mo]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/09701 : Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/15313 : being a land array, e.g. LGA
• CPC Class Codes: H01L 2924/15747 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2924/15787 : Ceramics, e.g. crystalline carbides, nitrides or oxides
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/19042 : being an inductor
• CPC Class Codes: H01L 2924/20753 : larger or equal to 30 microns less than 40 microns
• CPC Class Codes: H01L 2924/30105 : Capacitance
• CPC Class Codes: H01L 2924/30107 : Inductance
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding
• CPC Class Codes: H01L 2924/351 : Thermal stress

Abstract

Structure and method for fabrication of a leadless chip carrier have been disclosed. A disclosed embodiment comprises a substrate having a top surface for receiving a semiconductor die. The disclosed embodiment also comprises a printed circuit board attached to a bottom surface of the substrate. The disclosed embodiment further comprises at least one via in the substrate, which provides an electrical connection between a signal bond pad of the semiconductor die and the printed circuit board. The at least one via also electrically connects a substrate bond pad and the printed circuit board. The substrate bond pad is further connected to the signal bond pad of the semiconductor die by a signal bonding wire. The at least one via further provides an electrical connection between the signal bond pad of the semiconductor die and a land that is electrically connected to the printed circuit board.

Claims

1. A structure comprising:

a substrate having a top surface for receiving a die;

a printed circuit board attached to a bottom surface of said substrate;

a support pad attached to said top surface of said substrate, said support pad being coupled to a ground bond pad of said die by a down bonding wire, said die being mounted on said support pad;

at least one via in said substrate;

said at least one via providing an electrical connection between a signal bond pad of said die and said printed circuit board.

2. The structure of claim 1 wherein said die is a semiconductor die.

3. The structure of claim 1 wherein said substrate comprises organic material.

4. The structure of claim 3 wherein said organic material is selected from the group consisting of polytetrafluoroethylene material and an FR4 based laminate material.

5. The structure of claim 1 wherein said substrate comprises a ceramic material.

6. The structure of claim 1 wherein said at least one via provides an electrical connection between a substrate bond pad and said printed circuit board, wherein said substrate bond pad is electrically connected to said signal bond pad of said die.

7. The structure of claim 6 wherein said at least one via abuts said substrate bond pad.

8. The structure of claim 6 wherein said substrate bond pad is electrically connected to said signal bond pad of said die by a signal bonding wire.

9. The structure of claim 1 wherein said at least one via provides an electrical connection between said signal bond pad of said die and a land, said land being electrically connected to said printed circuit board.

10. The structure of claim 9 wherein said at least one via abuts said land.

11. The structure of claim 1 wherein said at least one via provides an electrical connection between a substrate bond pad and a land, wherein said substrate bond pad is electrically connected to said signal bond pad of said die, and wherein said land is electrically connected to said printed circuit board.

12. The structure of claim 11 wherein said at least one via abuts said substrate bond pad and said land.

13. The structure of claim 11 wherein said substrate bond pad is electrically connected to said signal bond pad of said die by a signal bonding wire.

14. The structure of claim 12 wherein said substrate bond pad is electrically connected to said signal bond pad of said die pad by a signal bonding wire.

15. The structure of claim 1 wherein said at least one via comprises copper.

16. The structure of claim 1 wherein said at least one via comprises a thermally conductive material.

17. A structure comprising:

a substrate having a top surface and a bottom surface;

a semiconductor die attached to said top surface of said substrate;

a heat spreader attached to said bottom surface of said substrate;

a support pad attached to said top surface of said substrate, said support pad being connected to said heat spreader;

a first via in said substrate;

said first via providing a connection between said semiconductor die and said heat spreader, wherein said heat spreader is an electrical conductor, wherein said structure further comprises a substrate down bond area attached to said top surface of said substrate, and wherein said first via provides an electrical connection between said substrate down bond area and said heat spreader.

18. The structure of claim 17 wherein a semiconductor die ground bond pad on said semiconductor die is electrically connected to said substrate down bond area by a down bonding wire.

19. A structure comprising:

a substrate having a top surface and a bottom surface;

a semiconductor die attached to said top surface of said substrate;

a heat spreader attached to said bottom surface of said substrate;

a support pad attached to said top surface of said substrate, said support pad being connected to said heat spreader;

a first via in said substrate;

said first via providing a connection between said semiconductor die and said heat spreader, said first via further providing an electrical connection between said semiconductor die and said heat spreader.