Semiconductor device having a composite layer in addition to a barrier layer between copper wiring and aluminum bond pad
First Claim
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1. A semiconductor device comprising:
- a semiconductor base;
at least one copper wiring level on the semiconductor base;
a barrier layer having a first thickness on, and in direct contact with, the copper wiring level;
an aluminum bond pad on the barrier layer; and
a composite layer having a second thickness in addition to the barrier layer wherein the composite layer is within the aluminum pad and spaced from the barrier layer, wherein the composite layer comprises a refractory metal and a refractory metal nitride and wherein the second thickness is greater than the first thickness.
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Abstract
A semiconductor device, and a method of fabricating the device, having a copper wiring level and an aluminum bond pad above the copper wiring level. In addition to a barrier layer which is normally present to protect the copper wiring level, there is a composite layer between the aluminum bond pad and the barrier layer to make the aluminum bond pad more robust so as to withstand the forces of bonding and probing. The composite layer is a sandwich of a refractory metal and a refractory metal nitride.
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Citations
12 Claims
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1. A semiconductor device comprising:
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a semiconductor base; at least one copper wiring level on the semiconductor base; a barrier layer having a first thickness on, and in direct contact with, the copper wiring level; an aluminum bond pad on the barrier layer; and
a composite layer having a second thickness in addition to the barrier layer wherein the composite layer is within the aluminum pad and spaced from the barrier layer, wherein the composite layer comprises a refractory metal and a refractory metal nitride and wherein the second thickness is greater than the first thickness. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor device comprising:
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a semiconductor base; at least one copper wiring level on the semiconductor base; a barrier layer having a first thickness on, and in direct contact with, the copper wiring level; an aluminum bond pad on the barrier layer; and a composite layer having a second thickness in addition to the barrier layer wherein the aluminum bond pad comprises first and second layers of aluminum and the composite layer is interposed between the first and second layers, wherein the composite layer comprises a refractory metal and a refractory metal nitride and wherein the second thickness is greater than the first thickness. - View Dependent Claims (12)
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Specification