Light emitting diode, optical semiconductor element and epoxy resin composition suitable for optical semiconductor element and production methods therefor

• US 6,960,878 B2
• Filed: 01/24/2002
• Issued: 11/01/2005
• Est. Priority Date: 01/24/2001
• Status: Active Grant

• Current Assignee: Nichia Corporation
• Original Assignee: Nichia Corporation
• Inventors: Sakano, Kensho, Okada, Yuji, Sakai, Kazuhiko, Umezu, Toshihiko
• Primary Examiner(s): WILLIAMS, JOSEPH L
• Application Number:
  US10/204,192
• Publication Number:
  US 20030080341A1
• Time in Patent Office: 1,377 Days
• Field of Search: 313/512, 438/20, 257/10
• US Class Current: 313/512
• CPC Class Codes: B29C 67/08 Screen moulding, e.g. forcing the moulding material through a perforated screen on to a moulding surface
• CPC Class Codes: C08L 63/00 Compositions of epoxy resins; Compositions of derivatives of epoxy resins
• CPC Class Codes: C09K 11/02 Use of particular materials as binders, particle coatings or suspension media therefor
• CPC Class Codes: C09K 11/7774 Aluminates
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48257 connecting the wire to a die pad of the item
• CPC Class Codes: H01L 2224/48465 the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• CPC Class Codes: H01L 2224/49107 on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/83 using a layer connector
• CPC Class Codes: H01L 2224/85 using a wire connector
• CPC Class Codes: H01L 2224/8592 Applying permanent coating, e.g. protective coating
• CPC Class Codes: H01L 2224/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 24/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01012 : Magnesium [Mg]
• CPC Class Codes: H01L 2924/0102 : Calcium [Ca]
• CPC Class Codes: H01L 2924/01021 : Scandium [Sc]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/0103 : Zinc [Zn]
• CPC Class Codes: H01L 2924/01032 : Germanium [Ge]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01038 : Strontium [Sr]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01049 : Indium [In]
• CPC Class Codes: H01L 2924/01051 : Antimony [Sb]
• CPC Class Codes: H01L 2924/01052 : Tellurium [Te]
• CPC Class Codes: H01L 2924/01056 : Barium [Ba]
• CPC Class Codes: H01L 2924/01057 : Lanthanum [La]
• CPC Class Codes: H01L 2924/01058 : Cerium [Ce]
• CPC Class Codes: H01L 2924/0106 : Neodymium [Nd]
• CPC Class Codes: H01L 2924/01063 : Europium [Eu]
• CPC Class Codes: H01L 2924/01065 : Terbium [Tb]
• CPC Class Codes: H01L 2924/01066 : Dysprosium [Dy]
• CPC Class Codes: H01L 2924/01075 : Rhenium [Re]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/01084 : Polonium [Po]
• CPC Class Codes: H01L 2924/01087 : Francium [Fr]
• CPC Class Codes: H01L 2924/10329 : Gallium arsenide [GaAs]
• CPC Class Codes: H01L 2924/12036 : PN diode
• CPC Class Codes: H01L 2924/12041 : LED
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/12043 : Photo diode
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/20753 : larger or equal to 30 microns less than 40 microns
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding
• CPC Class Codes: H01L 2924/351 : Thermal stress
• CPC Class Codes: H01L 33/486 : adapted for surface mounting
• CPC Class Codes: H01L 33/502 : Wavelength conversion materials
• CPC Class Codes: H01L 33/504 : Elements with two or more wavelength conversion materials
• CPC Class Codes: H01L 33/508 : having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
• CPC Class Codes: H01L 33/54 : having a particular shape

Abstract

A light emitting diode comprising an LED chip having a light emitting layer made of a nitride compound semiconductor and a light transmitting resin that includes a fluorescent material which absorbs at least a part of light emitted by the LED chip and emits light of a different wavelength, wherein the fluorescent material includes a fluorescent particles of small particle size and a fluorescent particles of large particle size, the fluorescent particles of large particle size being distributed in the vicinity of the LED chip in the light transmitting resin to form a wavelength converting layer, the fluorescent particles of small particle size being distributed on the outside of the wavelength converting layer in the light transmitting resin.

Claims

1. An epoxy resin composition comprising:

an epoxy resin comprising an alicyclic epoxy resin in an amount of 65% by weight or more of the epoxy resin, an acid anhydride represented by the general formula (1) or dicarboxylic acid represented by the general formula (2) in an amount of 0.005 to 1.5 mol based on an epoxy equivalent of the epoxy resin, and

a cation curing agent in an amount of 0.0001 to 0.01 mol based on an epoxy equivalent of said epoxy resin

wherein R₁ represents a cyclic or aliphatic alkyl, or a cyclic or aliphatic aryl, said R₁ having 0 to 12 carbon atoms and R₂ represents an alkyl or aryl, said R₂ having 0 to 12 carbon atoms.

2. The epoxy resin composition according to claim 1:

wherein said alicyclic epoxy resin is a resin selected from the group consisting of an epoxidated cyclohexene derivative, a hydrated bisphenol A diglycidyl ether and a diglycidyl hexahydrophthalate ester.

3. The epoxy resin composition according to claim 1:

wherein said cation curing agent is one selected from the group consisting of an aromatic sulfonium salt, an aromatic diazonium salt, an aromatic iodonium salt and an aromatic selenium salt.

4. The epoxy resin composition according to claim 1 further comprising:

a polyhydric alcohol or a polycondensate thereof in the amount of 0.1 to 5.0 equivalents based on the acid anhydride or dicarboxylic acid.

5. The epoxy resin composition according to claim 4:

wherein said polyhydric alcohol is one selected from the group consisting of an ethylene glycol, a diethylene glycol, a trimethylene glycol, a triethylene glycol, a propylene glycol, a 1,4-butanediol, and a 1,6-hexanediol.

6. A method for producing the epoxy resin composition according to claim 1 comprising:

reacting said epoxy resin and said acid anhydride or dicarboxylic acid to obtain a crosslinked oligomer,

mixing of said cross linked oligomer and said cation curing agent.

7. An optical semiconductor device comprising:

at least a pair of lead electrodes,

an optical semiconductor chip that is electrically connected to said lead electrodes, and

a molding resin that seals said optical semiconductor chip,

wherein the molding resin comprises said epoxy resin composition according to claim 1.

8. The optical semiconductor device according to claim 7, wherein said optical semiconductor chip is mounted on a surface of a substrate having said lead electrodes formed thereon.

9. The optical semiconductor device according to claim 7:

wherein said optical semiconductor chip is a light emitting diode chip having a light emitting layer made of a nitride semiconductor that includes at least in and Ga and a main peak of emission at a wavelength of 550 nm or shorter.