Film thickness measuring method of member to be processed using emission spectroscopy and processing method of the member using the measuring method

• US 6,961,131 B2
• Filed: 08/16/2004
• Issued: 11/01/2005
• Est. Priority Date: 06/20/2000
• Status: Expired due to Term

• Current Assignee: Opnext Japan, Inc. (Lumentum Holdings Inc.)
• Original Assignee: Opnext Japan, Inc. (Lumentum Holdings Inc.)
• Inventors: Fujii, Takashi, Yoshigai, Motohiko, Usui, Tatehito, Kaji, Tetsunori
• Primary Examiner(s): Smith, Zandra V.
• Assistant Examiner(s): Connolly, Patrick J.
• Application Number:
  US10/918,367
• Publication Number:
  US 20050018207A1
• Time in Patent Office: 442 Days
• Field of Search: 356/451, 356/503, 356/504, 438/14, 438/16
• US Class Current: 356/503
• CPC Class Codes: G01B 11/0625 with measurement of absorption or reflection
• CPC Class Codes: G01B 11/0675 using interferometry
• CPC Class Codes: H01L 21/67069 for drying etching
• CPC Class Codes: H01L 22/26 Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement endpoint detection arrangements in CMP apparatus B24B37/013, in discharge apparatus H01J37/32
• CPC Class Codes: Y10T 436/106664 Blood serum or blood plasma standard or control

Abstract

A standard pattern of a differential value of an interference light is set with respect to a predetermined film thickness of a first member to be processed. The standard pattern uses a wavelength as a parameter. Then, an intensity of an interference light of a second member to be processed, composed just like the first member, is measured with respect to each of a plurality of wavelengths so as to obtain a real pattern of an differential value of the measured interference light intensity. The real pattern also uses a wavelength as a parameter. Then, the film thickness of the second member is obtained according to the standard pattern and the real pattern of the differential value.

Claims

1. A film thickness measuring apparatus for measuring a film thickness of a member to be processed, comprising:

a differential waveform pattern data base for holding a standard pattern consisting of a time differential value of an interference light for each of multiple wavelengths with respect to a film thickness of a first member to be processed;

a unit for measuring an intensity of an interference light for each of multiple wavelengths of a second member to be processed, where said second member is composed just like said first member;

a unit for obtaining a real pattern consisting of time differential values of measured interference light intensities; and

a unit for obtaining a film thickness of said second member according to said standard pattern consisting of said time differential values and said real pattern consisting of said time differential values.

5. A film thickness measuring apparatus according to claim 1, wherein the unit for measuring the intensity of an interference light of a second member to be processed is a spectroscope, and the unit for obtaining a real pattern is a differentiator.

2. A film thickness measuring apparatus for measuring a film thickness of a member to be processed, comprising:

a differential waveform pattern data base for holding a wavelength at a zero-cross point in a standard pattern consisting of a time differential value of an interference light for each of multiple wavelengths and a time differential value of the standard pattern in at least one more wavelength of an interference light with respect to a predetermined film thickness of a first member to be processed;

a unit for measuring an intensity of an interference light for each of multiple wavelengths of a second member being processed, where said second member is composed just like said first member;

a unit for obtaining a wavelength at a zero-cross point in a real pattern of a time differential values of said measured interference light intensities and a time differential value of a real pattern in at least one more wavelength; and

a unit for obtaining a film thickness of said second member according to matching of a wavelength at said zero-cross point between said standard pattern and said real pattern of said time differential values and according to matching with a value of a time differential value in at least one more wavelength.

6. A film thickness measuring apparatus according to claim 2, wherein the unit for measuring the intensity of an interference light of a second member to be processed is a spectroscope, and the unit for obtaining a real pattern is a differentiator.

3. A processing apparatus for processing a member to be processed, comprising:

a unit for setting a standard pattern consisting of a time differential value of an interference light for each of multiple wavelengths with respect to a film thickness of a first member to be processed;

a unit for measuring an intensity of an interference light for each of multiple wavelengths of a second member being processed, where said second member is composed just like said first member, with respect to each of multiple wavelengths so as to obtain a real pattern consisting of time differential values of the measured interference light intensities;

a unit for obtaining a film thickness of said second member according to said standard pattern consisting of said time differential values and said real pattern consisting of said time differential values; and

a unit for performing the next processing according to said obtained film thickness of said second member.

4. An etching apparatus for etching a member to be processed placed on a sample stand by plasma in a vacuum chamber, comprising:

a unit for setting a standard pattern consisting of a differential value of an interference light for each of multiple wavelengths with respect to a film thickness of a first member to be processed;

a unit for measuring an intensity of an interference light for each of multiple wavelengths of a second member being processed, where said second member is composed just like said first member, with respect to each of the multiple wavelengths so as to obtain a real pattern consisting of time differential values of the measured interference light intensities;

a unit for obtaining a film thickness of said second member according to said standard pattern consisting of said time differential values and said real pattern consisting of said time differential values; and

a unit for etching said second member while controlling etching conditions according to said obtained film thickness of said second member.