Digitizing temperature measurement system and method of operation

• US 6,962,436 B1
• Filed: 03/17/2005
• Issued: 11/08/2005
• Est. Priority Date: 03/27/2003
• Status: Active Grant

• Current Assignee: National Semiconductor Corporation (Texas Instruments, Inc.)
• Original Assignee: National Semiconductor Corporation (Texas Instruments, Inc.)
• Inventors: Holloway, Peter R., Wan, Jun, Blom, Eric D., Urie, Stuart H.
• Primary Examiner(s): Verbitsky, Gail
• Assistant Examiner(s): Jagan, Mirellys
• Application Number:
  US11/083,861
• Time in Patent Office: 236 Days
• Field of Search: 374/170, 374/178, 374/173, 374/168, 374/172, 374/171, 257/470, 327/512, 327/336, 341/143
• US Class Current: 374/170
• CPC Class Codes: G01K 1/028 arrangements for numerical indication
• CPC Class Codes: G01K 7/01 using semiconducting elements having PN junctions G01K7/02, G01K7/16, G01K7/30 take precedence
• CPC Class Codes: H03M 3/324 characterised by means or methods for compensating or preventing more than one type of error at a time, e.g. by synchronisation or using a ratiometric arrangement
• CPC Class Codes: H03M 3/43 the quantiser being a single bit one
• CPC Class Codes: H03M 3/456 the modulator having a first order loop filter in the feedforward path

Abstract

A digitizing temperature measurement system for providing a digital temperature measurement includes an excitation source for providing switched excitation currents to two or three temperature sensing elements and an ADC circuit including a charge-balancing modulator and a digital post processing circuit. The system utilizes synchronous AC excitation of the temperature sensing elements and an AC coupled analog-to-digital converter input. The temperature measurement system also implements correlated double sampling for noise cancellation to provide low noise and highly accurate analog-to-digital conversions. The modulator receives a charge domain reference signal generated by a reference charge packet generator incorporating a charge based bandgap subsystem. Therefore, the temperature measurement system can be operated at very low supply voltages, such as 1.0 Vdc. A low noise and highly accurate temperature measurement system is thus realized where temperature measurements of very high resolutions (up to 16 bit) can be attained.

Claims

1. A method for sampling and digitizing a temperature measurement from a first temperature sensing element, comprising:

applying a first excitation source to said first temperature sensing element;

generating an input voltage step at said first temperature sensing element as a result of said application of said first excitation source;

AC coupling said input voltage step to an integrator;

integrating charges corresponding to a transition of said input voltage step on an accumulation capacitor;

generating entirely in the charge domain a charge domain reference signal;

applying said charge domain reference signal to said integrator;

generating a data dependent signal for deactivating or activating said integrator;

integrating charges corresponding to a reference charge packet associated with a transition of said charge domain reference signal on said accumulation capacitor when said data dependent signal has a first value or disregarding said charges corresponding to said reference charge packet when said data dependent signal has a second value, said transition of said charge domain reference signal being opposite to said transition of said input voltage step;

comparing a signal corresponding to said charges accumulated on said accumulation capacitor with a reference level; and

generating an output signal as a result of said comparing, said data dependent signal having said first value and said second value corresponding to respective logical levels of said output signal;

wherein after a plurality of sampling cycles, said output signal forms a digital data stream having an ones density proportional to a magnitude of said input voltage step.

2. The method of claim 1, wherein said charge domain reference signal comprises two component charge packets, and wherein said applying said charge domain reference signal to said integrator comprises AC coupling at least one of said two component charge packets of said charge domain reference signal to said integrator.

3. The method of claim 1, further comprising:

in response to a first clock signal, deactivating said integrator and operating said integrator in a correlated double sampling mode, said deactivating and operating comprising;

shorting out an amplifier in said integrator; and

storing an amplifier error voltage onto an input capacitor of said integrator, said amplifier error voltage comprising an amplifier offset voltage, 1/f noise and wideband amplifier noise.

4. The method of claim 1, wherein said comparing comprises:

coupling an inverting buffer to said accumulation capacitor;

generating at said inverting buffer a voltage corresponding to an inverted voltage value corresponding to said charges accumulated on said accumulation capacitor; and

comparing said voltage at said inverting buffer with said reference level.

5. The method of claim 1, wherein said AC coupling said input voltage step to an integrator comprises:

coupling said input voltage step to a first terminal of an input capacitor of said integrator;

coupling a second terminal of said input capacitor to an input terminal of an amplifier and a first terminal of said accumulation capacitor, said accumulation capacitor being coupled between said input terminal and an output terminal of said amplifier.

6. The method of claim 1, further comprising:

counting occurrences of ones in said digital data stream over a plurality of sampling cycles and generating a count value; and

subtracting an offset value from said count value to generate a temperature output value, wherein said offset value comprises a value for converting said count value from degree Kelvin to degree Centigrade.

7. The method of claim 6, further comprising:

applying a first trim value to adjust a total number of sampling cycles for which said occurrences of ones are counted; and

applying a second trim value to adjust the value of said offset value.

8. The method of claim 1, wherein said generating entirely in the charge domain a charge domain reference signal and said applying said charge domain reference signal to said integrator comprise:

applying a second excitation source to a second temperature sensing element;

applying a third excitation source to a third temperature sensing element;

generating a first temperature-dependent voltage step at said second temperature sensing element as a result of said application of said second excitation source;

generating a second temperature-dependent voltage step at said third temperature sensing element as a result of said application of said third excitation source;

AC coupling said first temperature-dependent voltage step through a first capacitor to generate a first charge packet;

AC coupling said second temperature-dependent voltage step through a second capacitor to generate a second charge packet; and

summing said first and second charge packets to generate said reference charge packet.

9. The method of claim 8, wherein said second temperature sensing element comprises a second isothermal diode and said third temperature sensing element comprises a third isothermal diode, said first temperature-dependent voltage step comprising a Δ

V_BE voltage of said second isothermal diode as a result of the switched excitation of said second isothermal diode by a first current and a second current, and said second temperature-dependent voltage step comprises a V_BEH voltage of said third isothermal diode as a result of the excitation of said third isothermal diode by the greater of the first and second currents.

10. The method of claim 8, wherein said second temperature sensing element comprises a second isothermal diode and said third temperature sensing element comprises a third isothermal diode, said first temperature-dependent voltage step comprising a Δ

V_BE voltage of said second isothermal diode as a result of the switched excitation of said second isothermal diode by a first current and a second current, and said second temperature-dependent voltage step comprises a V_BEL voltage of said third isothermal diode as a result of the excitation of said third isothermal diode by the smaller of the first and second currents.

11. The method of claim 1, wherein said generating entirely in the charge domain a charge domain reference signal and said applying said charge domain reference signal to said integrator comprise:

applying a second excitation source to a second temperature sensing element;

generating a first temperature-dependent voltage step and a second temperature-dependent voltage step at said second temperature sensing element as a result of said application of said second excitation source;

AC coupling said first temperature-dependent voltage step through a first capacitor to generate a first charge packet;

coupling said second temperature-dependent voltage step through a second capacitor to generate a second charge packet; and

summing said first and second charge packets to generate said reference charge packet.

12. The method of claim 11, wherein said transition of said input voltage step comprises a rising edge of said input voltage step and said transition of said charge domain reference signal comprises falling edges of said first and second temperature-dependent voltage steps.

13. The method of claim 11, wherein said transition of said input voltage step comprises a falling edge of said input voltage step and said transition of said charge domain reference signal comprises rising edges of said first and second temperature-dependent voltage steps.

14. The method of claim 11, wherein said first temperature sensing element comprises a first isothermal diode and said second temperature sensing element comprises a second isothermal diode, said first temperature-dependent voltage step comprising a Δ

V_BE voltage of said second isothermal diode as a result of the switched excitation of said second isothermal diode by a first current and a second current, and said second temperature-dependent voltage step comprises a V_BEH voltage of said second isothermal diode as a result of the excitation of said second isothermal diode by the greater of the first and second currents.

15. The method of claim 11, wherein said first temperature sensing element comprises a first isothermal diode and said second temperature sensing element comprises a second isothermal diode, said first temperature-dependent voltage step comprising a Δ

V_BE voltage of said second isothermal diode as a result of the switched excitation of said second isothermal diode by a first current and a second current, and said second temperature-dependent voltage step comprises a V_BEL voltage of said second isothermal diode as a result of the excitation of said second isothermal diode by the smaller of the first and second currents.

16. The method of claim 11, wherein said applying a first excitation source and said applying a second excitation source comprise generating a first current as said first excitation source and generating a second current as said second excitation source at a switched excitation circuit, said switched excitation circuit comprising at least one current source.