Methods of fabrication of semiconductor dice having back side redistribution layer accessed using through-silicon vias and assemblies thereof
First Claim
1. A method of making a semiconductor substrate, the method comprising:
- providing at least one semiconductor die having an active surface and a back surface, the at least one semiconductor die defining at least one via having a substantially uniform cross section therethrough extending from the active surface to the back surface thereof;
disposing conductive material in the at least one via to substantially extend therethrough from the active surface to the back surface of the at least one semiconductor die wherein the conductive material completely fills the at least one via;
forming at least one electrically conductive redistribution line on the active surface of the at least one semiconductor die in electrical communication with the conductive material of the at least one via and extending to a predetermined location on the active surface of the at least one semiconductor die remote from the location of the at least one via; and
forming at least one electrically conductive redistribution line on the back surface of the at least one semiconductor die in electrical communication with the conductive material of the at least one via and extending to a predetermined location on the back surface of the at least one semiconductor die remote from the location of the at least one via.
0 Assignments
0 Petitions
Accused Products
Abstract
An apparatus and method of rerouting redistribution lines from an active surface of a semiconductor substrate to a back surface thereof and assembling and packaging individual and multiple semiconductor dice with such rerouted redistribution lines formed thereon. The semiconductor substrate includes one or more vias having conductive material formed therein and which extend from an active surface to a back surface of the semiconductor substrate. The redistribution lines are patterned on the back surface of the semiconductor substrate, extending from the conductive material in the vias to predetermined locations on the back surface of the semiconductor substrate that correspond with an interconnect pattern of another substrate for interconnection thereto.
-
Citations
28 Claims
-
1. A method of making a semiconductor substrate, the method comprising:
-
providing at least one semiconductor die having an active surface and a back surface, the at least one semiconductor die defining at least one via having a substantially uniform cross section therethrough extending from the active surface to the back surface thereof;
disposing conductive material in the at least one via to substantially extend therethrough from the active surface to the back surface of the at least one semiconductor die wherein the conductive material completely fills the at least one via;
forming at least one electrically conductive redistribution line on the active surface of the at least one semiconductor die in electrical communication with the conductive material of the at least one via and extending to a predetermined location on the active surface of the at least one semiconductor die remote from the location of the at least one via; and
forming at least one electrically conductive redistribution line on the back surface of the at least one semiconductor die in electrical communication with the conductive material of the at least one via and extending to a predetermined location on the back surface of the at least one semiconductor die remote from the location of the at least one via. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
-
-
14. A method of assembling a semiconductor assembly comprising:
-
providing a substrate having a first surface and a second surface and at least one electrical interconnect on the first surface;
providing a first semiconductor die having an active surface bearing integrated circuitry and a back surface, the first semiconductor die defining at least one via having a substantially uniform cross section extending from the active surface to the back surface with conductive material formed therein, wherein the conductive material completely fills the at least one via, the active surface having at least one redistribution line thereon extending from the conductive material in the at least one via to a predetermined location on the active surface, the back surface having at least one redistribution line thereon extending from the conductive material in the at least one via to a predetermined location on the back surface; and
attaching the back surface of the first semiconductor die to the first surface of the substrate so that the at least one electrical interconnect on the first surface is electrically connected to the at least one redistribution line at the predetermined location on the back surface of the first semiconductor die. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28)
-
Specification