Dual strain-state SiGe layers for microelectronics
First Claim
1. A strained crystalline layer having a tensilely strained SiGe portion and a compressively strained SiGe portion, wherein said tensilely strained SiGe portion and said compressively strained SiGe portion are in coplanar spatial relation, and said compressively strained SiGe having higher Ge concentration than said tensilely strained SiGe, and the Ge concentration in said compressively strained SiGe is above 90%.
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Abstract
A strained crystalline layer having a tensilely strained SiGe portion and a compressively strained SiGe portion is disclosed. The strained crystalline layer is epitaxially bonded, or grown, on top of a SiGe relaxed buffer layer, in a way that the tensilely strained SiGe has a Ge concentration below that of the SiGe relaxed buffer, and the compressively strained SiGe has a Ge concentration above that of the SiGe relaxed buffer. The strained crystalline layer and the relaxed buffer can reside on top a semi-insulator substrate or on top of an insulating divider layer. In some embodiments the tensile SiGe layer is pure Si, and the compressive SiGe layer is pure Ge. The tensilely strained SiGe layer is suited for hosting electron conduction type devices and the compressively strained SiGe is suited for hosting hole conduction type devices. The strained crystalline layer is capable to seed an epitaxial insulator, or a compound semiconductor layer.
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Citations
80 Claims
- 1. A strained crystalline layer having a tensilely strained SiGe portion and a compressively strained SiGe portion, wherein said tensilely strained SiGe portion and said compressively strained SiGe portion are in coplanar spatial relation, and said compressively strained SiGe having higher Ge concentration than said tensilely strained SiGe, and the Ge concentration in said compressively strained SiGe is above 90%.
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25. A layered structure, comprising:
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a Si substrate;
an insulating divider layer disposed on top of said substrate, wherein said insulating divider layer comprises at least one metallic plane;
a SiGe relaxed buffer disposed on top of said insulating divider layer; and
a strained crystalline layer epitaxially bonded on top of said SiGe relaxed buffer, said strained crystalline, layer having a tensilely strained SiGe portion and a compressively strained SiGe portion, wherein said tensilely strained SiGe having Ge concentration below that of said SiGe relaxed buffer, and said compressively strained SiGe having Ge concentration above that of said SiGe relaxed buffer. - View Dependent Claims (26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 63, 64)
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60. A processor, comprising:
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at least one chip, wherein said chip comprising a strained crystalline layer having a tensilely strained SiGe portion end a compressively strained SiGe portion, wherein said tensilely strained SiGe portion and said compressively strained SiGe portion are in coplanar spatial relation, and said compressively strained SiGe having higher Ge concentration than said tensilely strained SiGe, and the Ge concentration in said compressively strained SiGe is above 90%; and
a plurality of devices in said strained crystalline layer, wherein said plurality of devices comprise electron conduction type devices in said tensilely strained SiGe portion, and said plurality of devices comprise hole conduction type devices in said compressively strained SiGe portion. - View Dependent Claims (61, 62)
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75. A layered structure, comprising:
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a Si substrate;
an insulating divider layer disposed on top of said substrate;
a SiGe relaxed buffer disposed on top of said insulating divider layer;
a strained crystalline layer epitaxially bonded on top of said SiGe relaxed buffer, said strained crystalline layer having a tensilely strained SiGe portion and a compressively strained SiGe portion, wherein said tensilely strained SiGe portion and said compressively strained SiGe portion are in coplanar spatial relation, and said tensilely strained SiGe having Ge concentration below that of said SiGe relaxed buffer, and said compressively strained SiGe having Ge concentration above that of said SiGe relaxed buffer; and
at least one crystalline compound semiconductor layer, selected from the group consisting of GaAs, InAs, InP, InSb, and quaternaries, epitaxially bonded on top of said strained crystalline layer. - View Dependent Claims (76, 77, 78)
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79. A processor, comprising at least one chip, wherein said at least one chip comprising:
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a Si substrate;
an insulating divider layer disposed on top of said substrate, wherein said insulating divider layer comprises at least one metallic plane;
a SiGe relaxed buffer disposed on top of said insulating divider layer;
a strained crystalline layer epitaxially bonded on top of said SiGe relaxed buffer, said strained crystalline layer having a tensilely strained SiGe portion and a compressively strained SiGe portion, wherein said tensilely strained SiGe having Ge concentration below that of said SiGe relaxed buffer, and said compressively strained SiGe having Ge concentration above that of said SiGe relaxed buffer; and
a plurality of devices in said strained crystalline layer, wherein said plurality of devices comprise electron conduction type devices in said tensilely strained SiGe portion, and said plurality of devices comprise hole conduction type devices in said compressively strained SiGe portion.
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80. A processor, comprising at least one chip, wherein said at least one chip comprising:
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a Si substrate;
an insulating divider layer disposed on top of said substrate;
a SiGe relaxed buffer disposed on top of said insulating divider layer;
a strained crystalline layer epitaxially bonded on top of said SiGe relaxed buffer, said strained crystalline layer having a tensilely strained SiGe portion and a compressively strained SiGe portion, wherein said tensilely strained SiGe portion and said compressively strained SiGe portion are in coplanar spatial relation, and said tensilely strained SiGe having Ge concentration below that of said SiGe relaxed buffer, and said compressively strained SiGe having Ge concentration above that of said SiGe relaxed buffer;
at least one crystalline compound semiconductor layer, selected from the group consisting of GaAs, InAs, InP, InSb, and quaternaries, epitaxially bonded on top of said strained crystalline layer; and
a plurality of devices in said strained crystalline layer, wherein said plurality of devices comprise electron conduction type devices in said tensilely strained SiGe portion, and said plurality of devices comprise hole conduction type devices in said compressively strained SiGe portion.
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Specification