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Dual strain-state SiGe layers for microelectronics

  • US 6,963,078 B2
  • Filed: 03/15/2003
  • Issued: 11/08/2005
  • Est. Priority Date: 03/15/2003
  • Status: Expired due to Term
First Claim
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1. A strained crystalline layer having a tensilely strained SiGe portion and a compressively strained SiGe portion, wherein said tensilely strained SiGe portion and said compressively strained SiGe portion are in coplanar spatial relation, and said compressively strained SiGe having higher Ge concentration than said tensilely strained SiGe, and the Ge concentration in said compressively strained SiGe is above 90%.

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