×

Semiconductor device having a storage capacitor

  • US 6,963,084 B2
  • Filed: 01/16/2004
  • Issued: 11/08/2005
  • Est. Priority Date: 09/06/2000
  • Status: Expired due to Fees
First Claim
Patent Images

1. A semiconductor device comprising:

  • a substrate having a metal surface;

    a base insulating film formed on the substrate having the metal surface;

    a switching thin film transistor and a current controlling thin film transistor, both formed on the base insulating film in a pixel unit, wherein each of the thin film transistors comprises a semiconductor layer and a gate electrode with a gate insulating film interposed therebetween;

    an interlayer insulating film formed over the switching thin film transistor and the current controlling thin film transistor, wherein a portion of the interlayer insulating film is removed so as to expose a portion of the base insulating film;

    a metal wiring formed on the exposed portion of the base insulating film; and

    a storage capacitor comprising a portion of the substrate having the metal surface, the exposed portion of the base insulating film, and the metal wiring.

View all claims
  • 0 Assignments
Timeline View
Assignment View
    ×
    ×