Measurement of lateral diffusion of diffused layers

• US 6,963,393 B2
• Filed: 09/23/2002
• Issued: 11/08/2005
• Est. Priority Date: 09/23/2002
• Status: Expired due to Term

• Current Assignee: Semiconductor Physics Laboratory, Inc.
• Original Assignee: Applied Materials Incorporated
• Inventors: Borden, Peter G.
• Primary Examiner(s): Lauchman, Layla G.
• Application Number:
  US10/253,119
• Publication Number:
  US 20040057052A1
• Time in Patent Office: 1,142 Days
• Field of Search: 356/237.4, 356/237.2, 356/237.5, 356/625, 356/634, 356/364, 356/369, 356/432, 356/445, 438/7, 438/18, 438/16, 438/14, 438/15
• US Class Current: 356/237.4
• CPC Class Codes: G01N 21/1717 with a modulation of one or more physical properties of the sample during the optical investigation, e.g. electro-reflectance
• CPC Class Codes: G01N 21/55 Specular reflectivity
• CPC Class Codes: H01L 22/20 Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
• CPC Class Codes: H01L 22/34 Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line switching, multiplexing, gating devices G01R19/25; process control with lithography, e.g. dose control, G03F7/20; structures for alignment control by optical means G03F7/70633
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

Any semiconductor wafer fabrication process may be changed to monitor lateral abruptness of doped layers as an additional step in the wafer fabrication process. In one embodiment, a test structure including one or more doped regions is formed in a production wafer (e.g. simultaneously with one or more transistors) and one or more dimension(s) of the test structure are measured, and used as an estimate of lateral abruptness in other doped regions in the wafer, e.g. in the simultaneously formed transistors. Doped regions in test structures can be located at regularly spaced intervals relative to one another, or alternatively may be located with varying spacings between adjacent doped regions. Alternatively or in addition, multiple test structures may be formed in a single wafer, with doped regions at regular spatial intervals in each test structure, while different test structures have different spatial intervals.

Claims

1. A method for evaluating a semiconductor wafer, the method comprising:

forming a test structure of a predetermined geometry in the semiconductor material, said test structure comprising a plurality of areas separated from one another, at least one area in the plurality of areas being either mostly doped or mostly undoped;

measuring light reflected from said test structure, said reflected light having a component from said at least one area; and

analyzing a signal obtained from measuring to determine the extent of lateral diffusion in said at least one area;

wherein said analyzing includes using a measurement of linewidth to calibrate out the effect of linewidth errors due to variation in lithographic process.

2. The method of claim 1 wherein:

said plurality of areas comprises at least a first area that is mostly doped, and a second area that is mostly undoped; and

the method comprises measuring light reflected from said test structure, said reflected light having a component from each of said first area and said second area.

3. The method of claim 1 wherein:

a fraction of doping in said at least one area is known; and

said analyzing includes using said fraction to determine the extent of lateral diffusion.

4. The method of claim 1 further comprising:

illuminating at least a portion of the test structure with a first beam to generate a plurality of charge carriers;

illuminating with a second beam to perform said measuring in at least a region of the semiconductor wafer having at least some of the charge carriers in the plurality generated by the first beam.

5. The method of claim 4 wherein:

each of the first beam and the second beam are coincident.

6. The method of claim 4 wherein:

at least one of the first beam and the second beam is polarized.

7. The method of claim 6 wherein:

the test structure includes a plurality of doped regions, each doped region being separated from an adjacent doped region; and

polarization is parallel to each of said doped regions.

8. The method of claim 6 wherein:

each of the first beam and the second beam is polarized.

9. The method of claim 4 further comprising:

modulating intensity of the first beam at a predetermined frequency; and

using the predetermined frequency during said measuring.

10. The method of claim 1 wherein:

each area in said plurality is separated from an adjacent area by a fixed distance.

11. The method of claim 1 wherein:

each area in said plurality is separated from an adjacent area by a different distance.

12. The method of claim 1 wherein:

said measuring indicates linewidth after patterning.

13. The method of claim 1 further comprising:

using the extent of lateral diffusion to accept or reject the semiconductor wafer for further processing.

14. The method of claim 1 wherein:

width of patterned lines is measured after patterning and before ion implantation, using a scanning electron microscope.

15. A method for evaluating a semiconductor wafer, the method comprising:

forming a test structure of a predetermined geometry in the semiconductor material, said test structure comprising a plurality of areas separated from one another, a first area in the plurality of areas being doped at a different concentration relative to a second area in the plurality of areas;

measuring light reflected from said test structure, spid reflected light having a component from at least one of the first area and the second area;

analyzing a signal obtained from measuring to determine the extent of lateral diffusion in said at least one of the first area and the second area;

wherein a first fraction of doping in said first area is known and a second fraction of doping in said second area is also known, and said analyzing includes using said first fraction and said second fraction to determine the extent of lateral diffusion.

16. The method of claim 15 wherein:

wherein said measuring indicates linewidth after patterning.