Method of fabricating polysilicon film by excimer laser crystallization process
First Claim
1. A method of fabricating a polysilicon film by an excimer laser crystallization (ELC) process comprising following steps:
- providing a substrate, the substrate surface defined with a first region, a second region surrounding the first region, and a third region;
forming an amorphous silicon film on the silicon substrate;
performing a first photo-etching process to remove parts of the amorphous silicon film in the third region to form an alignment mark in the third region;
forming a mask layer on the amorphous silicon film;
performing a second photo-etching process to remove the mask layer on the amorphous film in the first region; and
performing the excimer laser crystallization process with an excimer laser to make the amorphous film in the first region crystallize to a polysilicon film.
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Abstract
A method of fabricating a polysilicon film by an excimer laser crystallization process is disclosed. First, a substrate with a first region, a second region surrounding the first region, and a third region is provided. An amorphous silicon film is formed on the substrate. A photo-etching process is performed to remove parts of amorphous silicon film in the third region to form an alignment mark. Then, a mask layer is formed on the amorphous silicon film and a second photo-etching process is performed to remove the mask layer in the first region to expose the amorphous silicon film in the first region. After that, an excimer laser irradiation process is performed so that the amorphous silicon film in the first region is crystallized and becomes a polysilicon film.
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Citations
20 Claims
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1. A method of fabricating a polysilicon film by an excimer laser crystallization (ELC) process comprising following steps:
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providing a substrate, the substrate surface defined with a first region, a second region surrounding the first region, and a third region; forming an amorphous silicon film on the silicon substrate; performing a first photo-etching process to remove parts of the amorphous silicon film in the third region to form an alignment mark in the third region; forming a mask layer on the amorphous silicon film; performing a second photo-etching process to remove the mask layer on the amorphous film in the first region; and performing the excimer laser crystallization process with an excimer laser to make the amorphous film in the first region crystallize to a polysilicon film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method of forming a polysilicon film by an excimer laser crystallization process, the method comprising following steps:
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providing a substrate, the substrate surface defined with a first region, a second region surrounding the first region, and a third region; forming an amorphous silicon film on the substrate; performing a first photo-etching process to remove parts of the amorphous silicon film in the third region to form an alignment mark in the third region; forming a heat-retaining capping layer covering the amorphous silicon film and the substrate; forming a mask layer on the heat-retaining capping layer; performing a second photo-etching process to remove the mask layer in the first region; and performing the excimer laser crystallization process with an excimer laser to make the amorphous film in the first region crystallize to a polysilicon film. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification