×

Method of fabricating a transistor on a substrate to operate as a fully depleted structure

  • US 6,964,903 B2
  • Filed: 01/25/2002
  • Issued: 11/15/2005
  • Est. Priority Date: 09/01/1998
  • Status: Expired due to Fees
First Claim
Patent Images

1. A method of fabricating a transistor on a substrate, the method comprising:

  • forming a first source/drain region on the substrate;

    vertically forming a body region on the first source/drain region as a fully depleted structure, forming a second source/drain region on the body region to form a column on the substrate, the body region having opposing sidewall surfaces on the column;

    forming a first gate on a first one of the opposing sidewall surfaces after forming the column, the first gate separated from the first one of the opposing sidewall surfaces by a first oxide layer; and

    forming a second gate on a second one of the opposing sidewall surfaces after forming the column, the second gate separated from the second one of the opposing sidewall surfaces by a second oxide layer, wherein vertically forming the body region includes vertically growing an epitaxial layer such that the body region is formed having a width and a doping concentration such that a threshold voltage is substantially independent of bulk charge in the body region in transistor operation.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×