Light-emitting device and method of fabricating the same
First Claim
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1. A light-emitting device comprising:
- a TFT comprising a source region and a drain region and a channel region provided between said source region and said drain region, said source region and said drain region and said channel region provided over a substrate;
a light-emitting element over the substrate, the light-emitting element comprising a first electrode, a light emitting layer comprising an organic compound and a second electrode, said light emitting layer provided over said first electrode, and said second electrode provided over said light emitting layer;
a drain wiring connected to one of said source region and said drain region;
an electrode connection wiring connected to said drain wiring and connected to said first electrode;
an insulating film provided over the electrode connection wiring, said drain wiring provided over the electrode connection wiring and over the insulating film; and
a separation portion formed over the drain wiring, the separation portion comprising a material that provides an etching rate smaller than that of a material forming the drain wiring.
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Abstract
A light-emitting device having a structure in which a mask used for forming a film such as an organic compound layer does not come in contact with the pixels in forming the light-emitting elements, and a method of fabricating the same. In fabricating the light-emitting device of the active matrix type, a partitioning wall constituted by a second wiring and a separation portion is formed on the interlayer-insulating film, and the pixels are surrounded by the partitioning wall, preventing the mask from coming into direct contact with the pixels, the mask being used for forming the organic compound layer and the opposing electrode of the light-emitting elements.
21 Citations
20 Claims
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1. A light-emitting device comprising:
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a TFT comprising a source region and a drain region and a channel region provided between said source region and said drain region, said source region and said drain region and said channel region provided over a substrate;
a light-emitting element over the substrate, the light-emitting element comprising a first electrode, a light emitting layer comprising an organic compound and a second electrode, said light emitting layer provided over said first electrode, and said second electrode provided over said light emitting layer;
a drain wiring connected to one of said source region and said drain region;
an electrode connection wiring connected to said drain wiring and connected to said first electrode;
an insulating film provided over the electrode connection wiring, said drain wiring provided over the electrode connection wiring and over the insulating film; and
a separation portion formed over the drain wiring, the separation portion comprising a material that provides an etching rate smaller than that of a material forming the drain wiring. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsYamagata, Hirokazu
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Primary Examiner(s)Schillinger, Laura
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Application NumberUS10/011,195Publication NumberTime in Patent Office1,439 DaysField of Search257 79-104, 257/72, 257/52, 257/59, 257/349, 257/55, 257/56, 257/347, 257/390, 257/13, 257/423, 257/577, 257/464, 428/690, 313502-512, 315/169.3, 315/169.1, 315/257, 315/268, 438/151, 438/155, 438/149, 438/166, 438/160, 438/162US Class Current257/79CPC Class CodesH01L 27/12 the substrate being other t...H01L 27/1248 with a particular compositi...H01L 29/66757 Lateral single gate single ...H01L 29/78621 with LDD structure or an ex...H10K 59/12 Active-matrix OLED [AMOLED]...H10K 59/122 Pixel-defining structures o...H10K 59/131 Interconnections, e.g. wiri...
