Structure and fabricating method with self-aligned bit line contact to word line in split gate flash
First Claim
1. A structure for semiconductor devices in which contact regions are self aligned to conductive lines, comprising:
- A silicon substrate having thereon partially fabricated devices with first openings and second openings, first polysilicon lines disposed against insulating sidewalls of said openings in said partially fabricated devices on a silicon substrate, said first polysilicon lines extending from the top of the first openings to above said silicon substrate;
oxide layers formed over the top and sides of said first polysilicon lines that are not against insulating sidewalls of said second openings and serving to insulate the first polysilicon lines;
polysilicon contact regions disposed directly over and connecting to silicon substrate regions and filling said first and second openings; and
second polysilicon lines connecting to said contact regions and disposed over said oxide layers formed on said first polysilicon lines.
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Abstract
A new structure is disclosed for semiconductor devices in which contact regions are self-aligned to conductive lines. Openings to a gate oxide layer, in partially fabricated devices on a silicon substrate, have insulating sidewalls. First polysilicon lines disposed against the insulating sidewalls extend from below the top of the openings to the gate oxide layer. Oxide layers are grown over the top and exposed sides of the first polysilicon lines serving to insulate the first polysilicon lines. Polysilicon contact regions are disposed directly over and connect to silicon substrate regions through openings in the gate oxide layer and fill the available volume of the openings. Second polysilicon lines connect to the contact regions and are disposed over the oxide layers grown on the first polysilicon lines.
19 Citations
13 Claims
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1. A structure for semiconductor devices in which contact regions are self aligned to conductive lines, comprising:
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A silicon substrate having thereon partially fabricated devices with first openings and second openings, first polysilicon lines disposed against insulating sidewalls of said openings in said partially fabricated devices on a silicon substrate, said first polysilicon lines extending from the top of the first openings to above said silicon substrate; oxide layers formed over the top and sides of said first polysilicon lines that are not against insulating sidewalls of said second openings and serving to insulate the first polysilicon lines; polysilicon contact regions disposed directly over and connecting to silicon substrate regions and filling said first and second openings; and second polysilicon lines connecting to said contact regions and disposed over said oxide layers formed on said first polysilicon lines. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A new structure for split gate flash memories in which contact regions are self aligned to conductive lines, comprising:
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a silicon region extending to the surface of a semiconductor wafer with alternating parallel columns of source and drain regions; rows of device regions that are separated by isolation regions and are perpendicular to the source/drain columns, with polysilicon contact regions disposed over drain regions connecting the drain regions to polysilicon bit lines which run in the row direction over the device regions, and said device regions as they are situated between consecutive drain regions are, in order of occurrence;
a spacer region, a floating gate region, a source line region, a floating gate region and a spacer region;
spacer regions composed of polysilicon lines, which serve as word lines in the column direction, that have oxide layers that were grown on the sides facing contact regions and on the top facing bit lines and oxide layers separating the spacer regions from the silicon region and from the adjacent floating gate region;
floating gate regions composed of a gate oxide layer over the silicon region that separates the silicon region from a polysilicon floating gate followed by an oxide layer, giving a total height some what greater than the other device regions, and oxide spacers separate the floating gate regions from adjacent source line regions;
source line regions composed of polysilicon lines in the column direction that contact source regions at the surface of the silicon region. - View Dependent Claims (9, 10, 11, 12, 13)
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Specification