Memory device operable in either a high-power, full-page size mode or a low-power, reduced-page size mode
First Claim
1. A computer system, comprising:
- a processor having a processor bus;
an input device coupled to the processor through the processor bus adapted to allow data to be entered into the computer system;
an output device coupled to the processor through the processor bus adapted to allow data to be output from the computer system;
a memory controller generating a row address having a plurality of row address bits followed by a column address having a plurality of column address bits, the memory controller generating an array select signal having either a first state or a second state; and
a memory device coupled to the memory controller, the memory device comprising;
a row decoder coupled to the memory controller to receive the row address, the row decoder generating a row activate signal at one of a plurality of output terminals corresponding to the row address;
a column decoder coupled to the memory controller to receive the column address, the column decoder generating a column activate signal at one of a plurality of output terminals corresponding to the column address; and
first and second arrays of memory cells operable to store data written to or read from the array at a location determined by the row address and the column address, each of the first and second arrays having a respective set of row lines;
a data path circuit operable to couple data signals corresponding to the data between the first and second arrays and an external data terminal;
a command signal generator operable to generate a sequence of control signals corresponding to command signals applied to an external terminal;
a mode select circuit'"'"' generating a mode select signal indicative of operation in either a first or a second mode; and
a switching circuit coupled between the row decoder and the row lines of the first and second arrays, the switching circuit being operable to couple the output terminals of the row decoder to respective row lines of the first and second arrays responsive to the mode select signal indicating operation in the first mode, the switching circuit being operable to couple the output terminals of the row decoder to respective row lines of the first array but not to the row lines of the second array responsive to the mode select signal indicating operation in the second mode and the array select signal having the first state, and the switching circuit being operable to couple the output terminals of the row decoder to respective row lines of the second array but not to the row lines of the first array responsive to the mode select signal indicating operation in the second mode and the array select signal having the second state.
1 Assignment
0 Petitions
Accused Products
Abstract
A memory device includes 4 memory banks each of which includes first and second arrays of memory cells. A mode register is programmed with a bit that selects a high-power, large-page operating mode or a low-power, small-page operating mode. In the high-power mode, a row decoder is coupled to the row lines in both the first and second arrays. In the low-power mode, the row decoder is coupled to the row lines in only one of the arrays as determined by the state of an array select signal. The array select signal corresponds to the most significant bit of the column address, but it is applied to the memory device at the time the row address is applied to the memory device. Sense amplifiers coupled to the first and second arrays may also be selectively enabled when the row lines for the corresponding array are coupled to the row decoder.
-
Citations
32 Claims
-
1. A computer system, comprising:
-
a processor having a processor bus;
an input device coupled to the processor through the processor bus adapted to allow data to be entered into the computer system;
an output device coupled to the processor through the processor bus adapted to allow data to be output from the computer system;
a memory controller generating a row address having a plurality of row address bits followed by a column address having a plurality of column address bits, the memory controller generating an array select signal having either a first state or a second state; and
a memory device coupled to the memory controller, the memory device comprising;
a row decoder coupled to the memory controller to receive the row address, the row decoder generating a row activate signal at one of a plurality of output terminals corresponding to the row address;
a column decoder coupled to the memory controller to receive the column address, the column decoder generating a column activate signal at one of a plurality of output terminals corresponding to the column address; and
first and second arrays of memory cells operable to store data written to or read from the array at a location determined by the row address and the column address, each of the first and second arrays having a respective set of row lines;
a data path circuit operable to couple data signals corresponding to the data between the first and second arrays and an external data terminal;
a command signal generator operable to generate a sequence of control signals corresponding to command signals applied to an external terminal;
a mode select circuit'"'"' generating a mode select signal indicative of operation in either a first or a second mode; and
a switching circuit coupled between the row decoder and the row lines of the first and second arrays, the switching circuit being operable to couple the output terminals of the row decoder to respective row lines of the first and second arrays responsive to the mode select signal indicating operation in the first mode, the switching circuit being operable to couple the output terminals of the row decoder to respective row lines of the first array but not to the row lines of the second array responsive to the mode select signal indicating operation in the second mode and the array select signal having the first state, and the switching circuit being operable to couple the output terminals of the row decoder to respective row lines of the second array but not to the row lines of the first array responsive to the mode select signal indicating operation in the second mode and the array select signal having the second state. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
-
-
17. In a memory device, a method of addressing an array of memory cells arranged in rows and column, the method comprising:
-
determining within the memory device whether the memory device is to operate in either a first mode or a second mode;
receiving a row address having a first plurality of row address bits and a column address having a second plurality of column address bits;
using the row address bits to open a row of memory cells in the memory array responsive to determining that the memory device is to operate in the first mode;
using the column address bits to select a memory cell in the open row after determining that the memory device is to operate in the first mode;
using one of the column address bits to select memory cells in either a first set of columns or a second set of columns after determining that the memory device is to operate in the second mode;
using the row address bits to open a row of memory cells in the selected memory cells after determining that the memory device is to operate in the second mode; and
using the column address bits to select a memory cell in the open row after determining that the memory device is to operate in the second mode. - View Dependent Claims (18, 19, 20, 21, 22)
-
-
23. A method of coupling row and column address signals to a memory device, comprising:
-
in a first mode, coupling M row address signals to the memory device to select one of 2M rows of memory cells in the memory device;
in the first mode, coupling N column address signals to the memory device to select a memory cell in one of 2N columns of memory cells in the selected row;
in a second mode, coupling M+1 row address signals to the memory device to select one of two sets of columns of memory cells in the memory device and one of 2M rows of memory cells in the selected set of columns; and
in the second mode, coupling N−
1 columns of memory cells to the memory device to select a memory cell in one of the 2N−
1 columns of memory cells in the selected row and selected set of columns. - View Dependent Claims (24)
-
-
25. A method of selecting a memory cell in an array of memory cells of a memory device, the method comprising:
-
in a first mode, selecting one of 2M rows of memory cells in the memory device;
in the first mode, selecting a memory cell in one of 2N columns of memory cells in the selected row;
in a second mode, selecting one of two sets of columns of memory cells in the memory device and one of 2M rows of memory cells in the selected set of columns; and
in the second mode, selecting a memory cell in one of the 2N−
1 columns of memory cells in the selected row and selected set of columns. - View Dependent Claims (26, 27, 28, 29)
-
-
30. A method of operating a memory device having an array of memory cells arranged in 2Mrows and 2N columns, the method comprising:
-
in a first operating mode, addressing the memory device as a single 2M×
2N array of memory cells; and
in a second operating mode, addressing the memory device as two separate 2M×
2N/2 arrays of memory cells. - View Dependent Claims (31, 32)
-
Specification