Apparatus having in-circuit FET on-resistance characterization

• US 6,965,838 B1
• Filed: 05/27/2004
• Issued: 11/15/2005
• Est. Priority Date: 05/27/2004
• Status: Expired due to Fees

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Bandholz, Justin Potok
• Primary Examiner(s): Wachsman, Hal
• Assistant Examiner(s): Barbee, Manuel L
• Application Number:
  US10/855,122
• Time in Patent Office: 537 Days
• Field of Search: 702/57, 702/64, 702/65, 702/108, 702/117, 324/600, 324/601, 324/607, 324/649, 324/691, 324/769, 324/771, 324/763, 324/158.1, 324/523, 324/525, 713/340
• US Class Current: 702/65
• CPC Class Codes: G01R 19/16538 in AC or DC supplies G01R19/16519 and G01R19/16528 take precedence
• CPC Class Codes: G01R 19/16571 comparing AC or DC current with one threshold, e.g. load current, over-current, surge current or fault current G01R19/16514, G01R19/16519, G01R19/16528, G01R19/16533, G01R19/1659 take precedence; measuring currents by using elements sensitive to the magnetic field generated G01R15/14; measuring earth resistance G01R27/18; testing for leakage or short circuits in electrical apparatus G01R31/52
• CPC Class Codes: G01R 27/14 Measuring resistance by measuring current or voltage obtained from a reference source G01R27/16, G01R27/20, G01R27/22 take precedence

Abstract

A computing system includes a semiconductor which sources current to load components within the system, a controllable load coupled to the semiconductor and having an on-state in which a predetermined current load is drawn from the semiconductor in addition to the load components, and a controller which couples the semiconductor and the controllable load. In this configuration, the controller senses the voltage across the semiconductor on at least three points in time. The controller activates the on-state of the controllable load during one of the three points in time and derives a first calculated voltage as a function of the three voltages sensed. The controller calculates the on-resistance of the semiconductor by dividing the first calculated voltage by the predetermined current.

Claims

1. Apparatus comprising:

a semiconductor having an output node which sources current to a first load;

a controllable load coupled to the output node of said semiconductor and having at least two controllable states of operation including an on state in which a predetermined current load is drawn from the output node of said semiconductor in addition to the first load; and

a controller which is coupled to said semiconductor and said controllable load and which

(1) senses the voltage across the output node of said semiconductor and a second node of said semiconductor on at least three points in time designated herein as T1, T2, and T3 wherein the controller

(2) activates the on state of said controllable load during T2 and

(3) derives a first calculated voltage as a function of the voltages sensed at T1, T2 and T3 and

(4) calculates the on-resistance of said semiconductor by dividing the first calculated voltage by the predetermined current.

2. Apparatus of claim 1 wherein the first calculated voltage is derived as the difference between the voltage sensed at T2 and a second calculated voltage which is a function of the voltages sensed at T1 and T3.

3. Apparatus of claim 2 wherein the second calculated voltage is interpolated based on the values of the voltages sensed at T1 and T3.

4. Apparatus of claim 3 wherein said controller includes an over-current sensor which indicates an over-current condition as a function of the calculated on-resistance.

5. Apparatus of claim 1 wherein the first load is a variable load and wherein T2 is equally spaced between T1 and T3 and wherein the first calculated voltage is derived as the difference between the voltage sensed at T2 and the average of the voltages sensed at T1 and T3.

6. Apparatus of claim 1 wherein said controller includes an over-current sensor which indicates an over-current condition as a function of the calculated on-resistance.

7. A method comprising:

sensing voltages appearing across an output node of a semiconductor and a second node of the semiconductor on at least three points in time designated as T1, T2, and T3 in which the semiconductor is sourcing current to a first load;

inducing a predetermined current load during T2, the predetermined current load being additional to the first load;

deriving a first calculated voltage as a function of the voltages sensed at T1, T2 and T3 and

calculating the on-resistance of the semiconductor by dividing the first calculated voltage by the predetermined current.

8. The method of claim 7 wherein the first calculated voltage is derived as the difference between the voltage sensed at T2 and a second calculated voltage which is a function of the voltages sensed at T1 and T3.

9. The method of claim 8 wherein the second calculated voltage is interpolated based on the values of the voltages sensed at T1 and T3.

10. Apparatus comprising:

an FET having an output node which sources current to a first variable load;

a controllable load coupled to the output node of said FET having at least two controllable states of operation including an off state, in which an insignificant amount of current is drawn from the output node of said FET, and an on state, in which a predetermined current load is drawn from the output node of said FET in addition to the first variable load;

a voltage sensor which is coupled to the output node of said FET and to a second node of said FET and which senses the voltage across the output node and the second node of said FET;

an interpolator which is coupled to said voltage sensor and which derives a first calculated voltage as a function of the voltages sensed by said voltage sensor; and

an FET controller which is coupled to the gate node of said FET and to said controllable load, said voltage sensor, and said interpolator and which controls the current to the first variable load by discretely switching said FET between a low on-resistance state and a high resistance state;

wherein said voltage sensor is activated under the control of the said FET controller to sense the voltage on at least three points in time designated herein as T1, T2, and T3,

and wherein said controller activates the off state of said controllable load during T1 and T3 and activates the on state of said controllable load during T2,

and wherein said interpolator (1) derives the first calculated voltage which is calculated as the difference between the voltage sensed at T2 and a second calculated voltage which is interpolated based on the values of the voltages sensed at T1 and T3, and (2) calculates the on-resistance of said FET by dividing the first calculated voltage by the predetermined current.

11. Apparatus of claim 10 wherein said FET controller includes an over-current sensor which indicates an over-current condition, wherein a trip point for the over-current sensor is set as a function of the calculated on-resistance.

12. Apparatus of claim 11 wherein the insignificant amount of current is less than one tenth of the predetermined current.

13. Apparatus comprising:

a processor, memory, and graphics controller;

a semiconductor having an output node which sources current to said processor, memory, and graphics controller;

a controllable load coupled to the output node of said semiconductor and having at least two controllable states of operation including an on state in which a predetermined current load is drawn from the output node of said semiconductor in addition to the current sourced to said processor, memory, and graphics controller; and

a controller which is coupled to said semiconductor and said controllable load and which

(1) senses the voltage across the output node of said semiconductor and a second node of said semiconductor on at least three points in time designated herein as T1, T2, and T3 wherein the controller

(2) activates the on state of said controllable load during T2 and

(3) derives a first calculated voltage as a function of the voltages sensed at T1, T2 and T3 and

(4) calculates the on-resistance of said semiconductor by dividing the first calculated voltage by the predetermined current.

14. Apparatus of claim 13 wherein the first calculated voltage is derived as the difference between the voltage sensed at T2 and a second calculated voltage which is a function of the voltages sensed at T1 and T3.

15. Apparatus of claim 14 wherein the second calculated voltage is interpolated based on the values of the voltages sensed at T1 and T3.

16. Apparatus of claim 15 wherein said controller includes an over-current sensor which indicates an over-current condition as a function of the calculated on-resistance.

17. Apparatus comprising:

a processor, memory, and graphics controller;

an FET having an output node which sources current to said processor, memory, and graphics controller;

a controllable load coupled to the output node of said FET having at least two controllable states of operation including an off state, in which an insignificant amount of current is drawn from the output node of said FET, and an on state, in which a predetermined current load is drawn from the output node of said FET in addition to the current sourced to said processor, memory, and graphics controller;

a voltage sensor which is coupled to the output node of said FET and to a second node of said FET and which senses the voltage across the output node and the second node of said FET;

an interpolator which is coupled to said voltage sensor and which derives a first calculated voltage as a function of the voltages sensed by said voltage sensor; and

an FET controller which is coupled to the gate node of said FET and to said controllable load, said voltage sensor, and said interpolator and which controls the current to said processor, memory, and graphics controller by discretely switching said FET between a low on-resistance state and a high resistance state;

wherein said voltage sensor is activated under the control of the said FET controller to sense the voltage on at least three points in time designated herein as T1, T2, and T3,

and wherein said controller activates the off state of said controllable load during T1 and T3 and activates the on state of said controllable load during T2,

and wherein said interpolator (1) derives the first calculated voltage which is calculated as the difference between the voltage sensed at T2 and a second calculated voltage which is interpolated based on the values of the voltages sensed at T1 and T3, and (2) calculates the on-resistance of said FET by dividing the first calculated voltage by the predetermined current.

18. Apparatus of claim 17 wherein said FET controller includes an over-current sensor which indicates an over-current condition, wherein a trip point for the over-current sensor is set as a function of the calculated on-resistance.

19. Apparatus of claim 18 wherein the insignificant amount of current is less than one tenth of the predetermined current.

20. Apparatus of claim 19 wherein the interpolation is taken as an average of the values of the voltages sensed at T1 and T3.