Memory structures
First Claim
Patent Images
1. A memory structure comprising:
- a first electrode;
a second electrode having a generally vertically extending part and a generally horizontally extending part;
a third electrode;
a memory storage element of a predetermined device type disposed between said third electrode and said second electrode, said memory element adjacent to said vertically extending part of said second conductor or said horizontally extending part of said second electrode, but not both, and said memory storage element having a memory storage element cross-sectional area and configured for predictable breakdown as a memory storage element;
a control element of said predetermined device type disposed between said second electrode and said first electrode, said control element adjacent to said vertically extending part of said second conductor or said horizontally extending part of said second electrode, but not both, and said control element having a control cross-sectional area and configured as a control element for said memory storage element; and
said control element cross-sectional area being larger than said memory storage element cross-sectional area.
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Abstract
A memory structure that includes a first electrode, a second electrode, a third electrode, a control element of a predetermined device type disposed between the first electrode and the second electrode, and a memory storage element of the predetermined device type disposed between the second electrode and the third electrode. The memory storage element has a cross-sectional area that is less than a cross-sectional area of the control element.
47 Citations
34 Claims
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1. A memory structure comprising:
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a first electrode; a second electrode having a generally vertically extending part and a generally horizontally extending part; a third electrode; a memory storage element of a predetermined device type disposed between said third electrode and said second electrode, said memory element adjacent to said vertically extending part of said second conductor or said horizontally extending part of said second electrode, but not both, and said memory storage element having a memory storage element cross-sectional area and configured for predictable breakdown as a memory storage element; a control element of said predetermined device type disposed between said second electrode and said first electrode, said control element adjacent to said vertically extending part of said second conductor or said horizontally extending part of said second electrode, but not both, and said control element having a control cross-sectional area and configured as a control element for said memory storage element; and said control element cross-sectional area being larger than said memory storage element cross-sectional area. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28)
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29. A memory structure comprising:
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a first conductive tub having a base and a rim that are vertically separated a first memory selection conductor vertically adjacent said base of said first conductive tub; a first control element of disposed between said first memory selection conductor and said base of said first conductive tub; a second memory selection conductor vertically adjacent a portion of said rim of said first conductive tub; a first memory storage element disposed between said rim of said first conductive tub and said second memory selection conductor; said first control element having a cross-sectional area that is larger than a cross-sectional area of said first memory storage element; a second conductive tub having a base and a rim that are vertically separated, said base being vertically adjacent said second memory selection conductor; a second control element disposed between said second memory selection conductor and said base of said second conductive tub; a third memory selection conductor vertically adjacent a portion of said rim of said second conductive tub; a second memory storage element disposed between a portion of said rim of said second conductive tub and said third memory selection conductor; said second control element having a cross-sectional area that is larger than a cross-sectional area of said second memory storage element. - View Dependent Claims (30)
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31. A memory structure comprising:
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a plurality of layers of memory cells; each memory cell comprising a first electrode, a second electrode, a third electrode, a memory storage element disposed between said second electrode and said third electrode, and a control element disposed between said first electrode and said second electrode; and said control element having a cross-sectional area that is greater than a cross-sectional area of said memory storage element. - View Dependent Claims (32, 33, 34)
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Specification