Semiconductor light emitting device and fabrication method thereof

• US 6,967,353 B2
• Filed: 01/14/2003
• Issued: 11/22/2005
• Est. Priority Date: 01/18/2002
• Status: Expired due to Term

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Suzuki, Jun, Okuyama, Hiroyuki, Biwa, Goshi, Morita, Etsuo
• Primary Examiner(s): Thompson, Craig A.
• Assistant Examiner(s): Doty, Heather
• Application Number:
  US10/341,706
• Publication Number:
  US 20030180977A1
• Time in Patent Office: 1,043 Days
• Field of Search: 257/51, 257/53, 257/58, 257/82, 257/83, 257/88, 257/90, 257/101, 257/103, 257/61, 257/63, 257/94, 257/95
• US Class Current: 257/95
• CPC Class Codes: H01L 33/18 within the light emitting region
• CPC Class Codes: H01L 33/24 of the light emitting region, e.g. non-planar junction

Abstract

A semiconductor light emitting device includes a crystal layer formed on a substrate, the crystal layer having a tilt crystal plane tilted from the principal plane of the substrate, and a first conductive type layer, an active layer, and a second conductive type layer, which are formed on the crystal layer in such a manner as to extend within planes parallel to the tilt crystal plane, wherein the device has a shape formed by removing the apex and its vicinity of the stacked layer structure formed on the substrate. Such a semiconductor light emitting device is excellent in luminous efficiency even if the device has a three-dimensional device structure. The present invention also provides a method of fabricating the above semiconductor light emitting device.

Claims

1. A semiconductor light emitting device comprising:

a crystal layer formed on a substrate, said crystal layer having a tilt crystal plane tilted from the principal plane of said substrate; and

a first conductive type layer, an active layer, and a second conductive type layer, which are formed on said crystal layer in such a manner as to extend within planes parallel to said tilt crystal plane;

wherein said device has a shape formed by removing an apex and its vicinity, the apex including portions of the first conductive type layer, the active layer, the second conductive type layer, and said crystal layer structure formed on said substrate, and wherein the apex is removed such that there remains a substantially planar surface that is generally parallel to the substrate.

2. A semiconductor light emitting device according to claim 1, wherein said apex and its vicinity are removed along a plane parallel to the principal plane of said substrate or a plane substantially equivalent to the principal plane of said substrate.

3. A semiconductor light emitting device according to claim 1, wherein said crystal layer has a wurtzite type crystal structure.

4. A semiconductor light emitting device according to claim 1, wherein said crystal layer is made from a nitride semiconductor.

5. A semiconductor light emitting device according to claim 1, wherein said crystal layer is formed by selective growth on said substrate via an underlying growth layer.

6. A semiconductor light emitting device according to claim 5, wherein said selective growth is performed by making use of selective removal of said underlying growth layer.

7. A semiconductor light emitting device according to claim 5, wherein said selective growth is performed by making use of an opening selectively formed in a mask layer.

8. A semiconductor light emitting device according to claim 7, wherein said crystal layer is formed by selective growth from said opening of said mask layer in such a manner as to extend outwardly from said opening in the lateral direction.

9. A semiconductor light emitting device according to claim 1, wherein the principal plane of said substrate is the C-plane.

10. A semiconductor light emitting device according to claim 1, wherein said tilt crystal plane includes at least one of the S-plane and the (11-22) plane.

11. A semiconductor light emitting device according to claim 1, wherein said active layer is made from InGaN.