Semiconductor device including metal insulator semiconductor field effect transistor
First Claim
1. A semiconductor device comprising:
- a semiconductor substrate;
an N-channel MISFET and a P-channel MISFET provided on the semiconductor substrate, each of the N- and P-channel MISFETs being isolated by an isolation region and having a gate insulating film;
a first gate electrode film provided on the gate insulating film of the N-channel MISFET, the first gate electrode film being comprised of a first metal silicide composed of a first metal material;
a second gate electrode film provided on the gate insulating film of the P-channel MISFET, the second gate electrode film being comprised of a second metal silicide and a third metal silicide, the second metal silicide being comprised of a second metal material different from the first metal material, the third metal silicide including the first metal material and having a lower silicon content than the first metal silicide; and
the first gate electrode film having a work function being lower than that of the second gate electrode film.
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Accused Products
Abstract
A semiconductor device comprises a semiconductor substrate, an N-channel MISFET and a P-channel MISFET provided on the semiconductor substrate, each of the N- and P-channel MISFETs being isolated by an isolation region and having a gate insulating film, a first gate electrode film provided on the gate insulating film of the N-channel MISFET and composed of a first metal silicide, a second gate electrode film provided on the gate insulating film of the P-channel MISFET and composed of a second metal silicide made of a second metal material different from a first metal material composing the first metal silicide, and a work function of the first gate electrode film being lower than that of the second gate electrode film.
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Citations
11 Claims
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1. A semiconductor device comprising:
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a semiconductor substrate; an N-channel MISFET and a P-channel MISFET provided on the semiconductor substrate, each of the N- and P-channel MISFETs being isolated by an isolation region and having a gate insulating film; a first gate electrode film provided on the gate insulating film of the N-channel MISFET, the first gate electrode film being comprised of a first metal silicide composed of a first metal material; a second gate electrode film provided on the gate insulating film of the P-channel MISFET, the second gate electrode film being comprised of a second metal silicide and a third metal silicide, the second metal silicide being comprised of a second metal material different from the first metal material, the third metal silicide including the first metal material and having a lower silicon content than the first metal silicide; and the first gate electrode film having a work function being lower than that of the second gate electrode film. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A semiconductor device comprising:
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a semiconductor substrate; an N-channel MISFET and a P-channel MISFET provided on the semiconductor substrate, each of the N- and P-channel MISFETs being isolated by an isolation region and having a gate insulating film, elevated source/drain regions composed of a semiconductor film being provided on extension regions of the N-channel MISFET and the P-channel MISFET; a first gate electrode film provided on the gate insulating film of the N-channel MISFET, the first gate electrode film being comprised of a first metal silicide composed of a first metal material; a second gate electrode film provided on the gate insulating film of the P-channel MISFET, the second gate electrode film being comprised of a second metal silicide and a third metal silicide, the second metal silicide being comprised of a second metal material different from the first metal material, the third metal silicide including the first metal material and having a lower silicon content than the first metal silicide; and the first gate electrode film having a work function lower than that of the second gate electrode film. - View Dependent Claims (9, 10, 11)
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Specification