RF switch including diodes with intrinsic regions
First Claim
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1. A solid state switching assembly comprising:
- A) first and second diodes, each diode being characterized by an intrinsic region and having an anode and cathode, one of said anode and cathode constituting a first connection and the other of the anode and cathode constitution a second connection, said diodes being stacked with facing first connections in close proximity and said first and second diodes defining a package envelope, and B) a bias conductor connected to each of said first connections and extending externally of the package envelope whereby a bias signal applied to said bias conductor controls conductivity through said switching assembly with essentially a zero-length path between said proximate first connections.
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Abstract
An RF switch includes first and second diodes characterized by an intrinsic region. Pin diodes and nip diodes are examples of such diodes with intrinsic regions. The diodes are stacked with facing first connections. A bias conductor extends from the first connections.
58 Citations
23 Claims
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1. A solid state switching assembly comprising:
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A) first and second diodes, each diode being characterized by an intrinsic region and having an anode and cathode, one of said anode and cathode constituting a first connection and the other of the anode and cathode constitution a second connection, said diodes being stacked with facing first connections in close proximity and said first and second diodes defining a package envelope, and B) a bias conductor connected to each of said first connections and extending externally of the package envelope whereby a bias signal applied to said bias conductor controls conductivity through said switching assembly with essentially a zero-length path between said proximate first connections. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A solid state switching circuit for controlling the transfer of RF signals from an RF signal source, said circuit comprising:
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A) a heat and RF signal conducting support member, B) first and second diodes, each of said diodes being characterized by an intrinsic region and having an anode and cathode, one of said anode and cathode constituting a first connection and the other of the anode and cathode constituting second connection, said diodes being stacked with facing first connections is close proximity to define a package envelope, said second connection of said first diode being connected to said support member, and C) a bias conductor connected to each of said first connections and extending externally of the package envelope whereby a bias signal can be applied to said bias conductor thereby to control the transfer of RF signals between said support member and said second connection of said second diode with essentially a zero-length path between said proximate first connections. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21, 22, 23)
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Specification