Nitride based semiconductor structures with highly reflective mirrors
First Claim
Patent Images
1. A nitride based resonant cavity semiconductor structure comprising:
- a substrate;
a lower mirror including a first side and a second side, the first side of the lower mirror coupled to the substrate;
a plurality of III–
V nitride semiconductor layers, coupled to the second side of the lower mirror by a noncrystalline interface material, said plurality of III–
V nitride semiconductor layers forming a resonant cavity, at least one of said plurality of III–
V nitride semiconductor layers forming an active region;
an upper mirror on said plurality of III–
V nitride semiconductor layers, opposite said lower mirror; and
electrodes on two of said plurality of III–
V nitride semiconductor layers to bias said active region.
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Abstract
A nitride based resonant cavity semiconductor structure has highly reflective mirrors on opposite sides of the active layer. These highly reflective mirrors can be distributed Bragg reflectors or metal terminated layer stacks of dielectric materials. The nitride based resonant cavity semiconductor structure can be vertical cavity surface emitting laser (VCSEL), a light emitting diode (LED), or a photodetector (PD), or a combination of these devices.
47 Citations
39 Claims
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1. A nitride based resonant cavity semiconductor structure comprising:
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a substrate; a lower mirror including a first side and a second side, the first side of the lower mirror coupled to the substrate; a plurality of III–
V nitride semiconductor layers, coupled to the second side of the lower mirror by a noncrystalline interface material, said plurality of III–
V nitride semiconductor layers forming a resonant cavity, at least one of said plurality of III–
V nitride semiconductor layers forming an active region;an upper mirror on said plurality of III–
V nitride semiconductor layers, opposite said lower mirror; andelectrodes on two of said plurality of III–
V nitride semiconductor layers to bias said active region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30)
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31. A resonant cavity semiconductor structure comprising:
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a substrate; a lower mirror including a first side and a second side, the first side of the lower mirror being coupled to the substrate; a plurality of III–
V semiconductor layers, coupled to the second side of the lower mirror by a noncrystalline interface material, said plurality of III–
V semiconductor layers forming a resonant cavity, at least one of said plurality of III–
V semiconductor layers forming an active region;an upper mirror on said plurality of III–
V semiconductor layers, opposite said lower mirror; andelectrodes on two of said plurality of III–
V semiconductor layers to bias said active region.
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32. A resonant cavity structure comprising:
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two or more epitaxial III–
V semiconductor layers, the semiconductor layers having an earlier side and a later side opposite each other, the semiconductor layers having been deposited from the earlier side to the later side;
the semiconductor layers including an active region between the earlier side and the later side;
the earlier side having been prepared for deposition of material after completion of the later side;a first set of layers deposited on the later side of the semiconductor layers;
the first set of layers including a first mirror;a second set of layers deposited on the earlier side of the semiconductor layers;
the second set of layers including a second mirror;
the structure including a resonant cavity between the first and second mirrors; anda host substrate; one of the first and second mirrors being a lower mirror and the other being an upper mirror;
the set of layers that includes the lower mirror having first and second opposite sides;
the host substrate being on the first side and the second side being attached to the semiconductor layers by non-crystalline interface material. - View Dependent Claims (33, 34, 35, 36, 37, 38, 39)
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Specification