Full spectrum endpoint detection
First Claim
1. A method of endpoint detection during plasma processing of a semiconductor wafer, comprising:
- processing a semiconductor wafer using a plasma;
detecting radiation emission from the plasma during the semiconductor processing;
tracking data points representing changes in spectra of the radiation as a function of time during the semiconductor processing;
providing at any point prior to or during processing a plurality of profile programs, each profile program representing a different processing condition affecting detection of a plasma processing endpoint of the semiconductor wafer;
selecting a profile program;
inputting a first set of parameters into the selected profile program, the first set of parameters representing simplified values for determining when changes in spectra of the radiation indicate that plasma processing of the semiconductor wafer reaches an endpoint;
using the selected profile program, converting the input first set of parameters into a larger, second set of parameters;
applying the second set of parameters to an algorithm that converts data points from the spectra of the radiation as a function of time into an endpoint curve; and
using the algorithm to track changes in spectra of the radiation as a function of time and determine when plasma processing of the semiconductor wafer reaches an endpoint.
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Abstract
A method of endpoint detection during plasma processing of a semiconductor wafer comprises processing a semiconductor wafer using a plasma, detecting radiation emission from the plasma during the semiconductor processing, and tracking data points representing changes in spectra of the radiation as a function of time during the semiconductor processing. At any point prior to or during processing a plurality of profiles are provided, each profile representing a different processing condition affecting detection of the desired plasma processing endpoint of the semiconductor wafer. After selecting a desired profile, a first set of parameters are input, representing simplified values for determining when changes in spectra of the radiation indicate that plasma processing of the semiconductor wafer reaches a desired endpoint. The selected profile converts the input first set of parameters into a larger, second set of parameters, and then applies the second set of parameters to an algorithm that converts data points from the spectra of the radiation as a function of time into an endpoint curve. The method then uses the algorithm to track changes in spectra of the radiation as a function of time and determine when plasma processing of the semiconductor wafer reaches a desired endpoint.
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Citations
19 Claims
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1. A method of endpoint detection during plasma processing of a semiconductor wafer, comprising:
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processing a semiconductor wafer using a plasma; detecting radiation emission from the plasma during the semiconductor processing; tracking data points representing changes in spectra of the radiation as a function of time during the semiconductor processing; providing at any point prior to or during processing a plurality of profile programs, each profile program representing a different processing condition affecting detection of a plasma processing endpoint of the semiconductor wafer; selecting a profile program; inputting a first set of parameters into the selected profile program, the first set of parameters representing simplified values for determining when changes in spectra of the radiation indicate that plasma processing of the semiconductor wafer reaches an endpoint; using the selected profile program, converting the input first set of parameters into a larger, second set of parameters; applying the second set of parameters to an algorithm that converts data points from the spectra of the radiation as a function of time into an endpoint curve; and using the algorithm to track changes in spectra of the radiation as a function of time and determine when plasma processing of the semiconductor wafer reaches an endpoint. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 13)
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9. A method of endpoint detection during plasma processing of a semiconductor wafer, comprising:
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processing a semiconductor wafer using a plasma; detecting radiation emission from the plasma during the semiconductor processing; tracking data points representing changes in spectra of the radiation as a function of time during the semiconductor processing; providing a plurality of profile programs, each profile program representing a different processing condition affecting detection of a plasma processing endpoint of the semiconductor wafer; selecting a profile program; inputting a first set of parameters, including process time, into the selected profile program, the first set of parameters representing simplified values for determining when changes in spectra of the radiation indicate that plasma processing of the semiconductor wafer reaches an endpoint; using the selected profile program, converting the input first set of parameters into a larger, second set of parameters, including converting the process time into sampling interval of the data points; applying the second set of parameters to an algorithm comprising a full spectrum analysis of the spectra of the radiation emitted from the semiconductor wafer during plasma processing, the algorithm converting data points from the spectra of the radiation as a function of time into an endpoint curve; and using the algorithm to track changes in spectra of the radiation as a function of time and determine when plasma processing of the semiconductor wafer reaches an endpoint. - View Dependent Claims (10, 11, 12)
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14. A method of endpoint detection during plasma processing of a semiconductor wafer, comprising:
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processing a semiconductor wafer using a plasma; detecting radiation emission from the plasma during the semiconductor processing; tracking data points representing changes in spectra of the radiation as a function of time during the semiconductor processing; providing a plurality of profiles, each profile representing a different processing condition affecting detection of a plasma processing endpoint of the semiconductor wafer; selecting a profile; inputting a first set of parameters, including relative detection gain setting, into the selected profile, the first set of parameters representing simplified values for determining when changes in spectra of the radiation indicate that plasma processing of the semiconductor wafer reaches an endpoint; using the selected profile, converting the input first set of parameters into a larger, second set of parameters, including converting the relative detection gain setting into integration time for the data points; applying the second set of parameters to an algorithm comprising a full spectrum analysis of the spectra of the radiation emitted from the semiconductor wafer during plasma processing, the algorithm converting data points from the spectra of the radiation as a function of time into an endpoint curve; and using the algorithm to track changes in spectra of the radiation as a function of time and determine when plasma processing of the semiconductor wafer reaches an end point. - View Dependent Claims (15, 16, 17, 18)
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19. A method of endpoint detection during plasma processing of a semiconductor wafer, comprising:
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processing a semiconductor wafer using a plasma; detecting radiation emission from the plasma during the semiconductor processing; tracking data points representing changes in spectra of the radiation as a function of time during the semiconductor processing; providing at any point prior to or during processing a plurality of profiles, each profile representing a different processing condition affecting detection of a plasma processing endpoint of the semiconductor wafer; selecting a profile; inputting a first set of parameters into the selected profile, the first set of parameters representing simplified values for determining when changes in spectra of the radiation indicate that plasma processing of the semiconductor wafer reaches an endpoint, and including relative detection gain setting; using the selected profile, converting the input first set of parameters into a larger, second set of parameters, including converting the relative detection gain setting into integration time for the data points; applying the second set of parameters to an algorithm that converts data points from the spectra of the radiation as a function of time into an endpoint curve; and using the algorithm to track changes in spectra of the radiation as a function of time and determine when plasma processing of the semiconductor wafer reaches an endpoint.
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Specification