Method of transferring a device, a method of producing a device holding substrate, and a device holding substrate

• US 6,969,624 B2
• Filed: 02/17/2005
• Issued: 11/29/2005
• Est. Priority Date: 12/14/2000
• Status: Expired due to Term

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Iwafuchi, Toshiaki, Oohata, Toyoharu, Yanagisawa, Yoshiyuki
• Primary Examiner(s): Everhart, Caridad
• Application Number:
  US11/059,865
• Publication Number:
  US 20050148106A1
• Time in Patent Office: 285 Days
• Field of Search: 438/22, 438/458, 438/464, 438/928, 438/977
• US Class Current: 438/22
• CPC Class Codes: H01L 21/67092 Apparatus for mechanical treatment or grinding or cutting, see the relevant groups in subclasses B24B or B28D
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 21/76251 using bonding techniques
• CPC Class Codes: H01L 2221/68368 used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 27/153 in a repetitive configuration, e.g. LED bars
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/24 of the light emitting region, e.g. non-planar junction
• CPC Class Codes: Y10T 225/10 Methods

Abstract

The interface between a first substrate and light-emitting diodes formed on the first substrate is selectively irradiated with an energy beam and transmits the energy beam through the first substrate, thereby selectively releasing the light-emitting diodes. The light-emitting diodes are then transferred onto a device holding layer included on a device holding substrate. Subsequently, the light-emitting diodes are transferred onto a second substrate. The irradiation of the interface with the energy beam enables the devices to be easily released from the first substrate.

Claims

1. A method for transferring a device, comprising:

irradiating, selectively, an interface between a first substrate and a device included on the first substrate with an energy beam and transmitting the energy beam through the first substrate to selectively release the device;

transferring the released device onto a device holding layer included on a device holding substrate; and

transferring the device from the device holding layer onto a second substrate, wherein the device holding layer is a silicone resin layer.

2. A method for transferring a device, comprising:

irradiating, selectively, an interface between a first substrate and a device having one of a pointed head portion and a flat plate-shaped structure, included on the first substrate with an energy beam and transmitting the energy beam trough the first substrate to selectively release the device;

transferring the released device onto a device holding layer included on a device holding substrate; and

transferring the device from the device holding layer onto a second substrate, wherein the device holding layer is a silicone resin layer.

3. A method for transferring a device, comprising:

irradiating, selectively, an interface between a first substrate and a device included on the first substrate with an energy beam to selectively release the device;

transferring the released device onto a device holding layer included on a device holding substrate;

cleaning the device on the device holding layer; and

transferring the device from the device holding layer onto a second substrate, wherein the device holding layer is a silicone resin layer.

4. A method for transferring a device, comprising:

irradiating, selectively, an interface between a first substrate and a device included on the first substrate with an energy beam and transmitting the energy beam through the first substrate to selectively release the device;

transferring the released device onto a device holding layer included on a device holding substrate;

cleaning the device on the device holding layer after the device is transferred onto the device holding layer; and

transferring the device from the device holding layer onto a second substrate, wherein the device holding layer is a silicone resin layer.

5. A method for transferring a device, comprising:

irradiating, selectively, an interface between a first substrate and a device included on the first substrate with an energy beam and transmitting the energy beam through the first substrate to selectively release the device, wherein the device is formed of a nitride semiconductor material which produces ablation upon irradiation with the energy beam, and wherein the ablation is generated by the selective irradiation with the energy beam to cause exfoliation at an interface between the device and the first substrate;

transferring the released device onto a device holding layer included on a device holding substrate; and

transferring the device from the device holding layer onto a second substrate, wherein the device holding layer is a silicone resin layer.

6. A method for transferring a device, comprising:

irradiating, selectively, an interface between a first substrate and a device included on the first substrate with an energy beam and transmitting the energy beam through the first substrate to selectively release the device, wherein the first substrate is a sapphire substrate;

transferring the released device onto a device holding layer included on a device holding substrate; and

transferring the device from the device holding layer onto a second substrate, wherein the device holding layer is a silicone resin layer.