Methods of forming gate structures in nonvolatile memory devices having curved side walls formed using oxygen pathways
First Claim
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1. A method of forming a gate structure of a non-volatile integrated circuit memory device comprising:
- forming a gate structure including a floating gate on an oxide layer on a substrate;
forming an oxygen diffusion barrier layer on a side wall of the gate structure above the oxide layer; and
forming a thermal oxidation layer from the oxide layer, wherein the thermal oxidation layer continuously extends from beneath the oxygen diffusion barrier layer to beneath the floating gate and on the floating gate between the oxygen diffusion barrier layer and the floating gate to define a curved side wall portion of the floating gate.
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Abstract
Gate structures of a non-volatile integrated circuit memory device can include a thermal oxidation layer on a substrate beneath the gate structure that defines a side wall of the gate structure. An oxygen diffusion barrier layer is on the side wall of the gate structure and a floating gate is on the thermal oxidation layer and has a curved side wall portion. Related methods are also discussed.
17 Citations
24 Claims
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1. A method of forming a gate structure of a non-volatile integrated circuit memory device comprising:
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forming a gate structure including a floating gate on an oxide layer on a substrate;
forming an oxygen diffusion barrier layer on a side wall of the gate structure above the oxide layer; and
forming a thermal oxidation layer from the oxide layer, wherein the thermal oxidation layer continuously extends from beneath the oxygen diffusion barrier layer to beneath the floating gate and on the floating gate between the oxygen diffusion barrier layer and the floating gate to define a curved side wall portion of the floating gate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method for fabricating a transistor of a nonvolatile memory device, comprising:
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forming a gate pattern on an integrated circuit substrate, the gate pattern including a gate oxide layer, a floating gate, an inter-gate dielectric pattern, and a control gate which are stacked in the order named;
forming a diffusion barrier layer on an entire surface of an integrated circuit substrate including the gate pattern;
anisotropically etching the diffusion barrier layer to form a diffusion barrier spacer over a lateral side of the gate pattern; and
thermally oxidizing an integrated circuit substrate including the diffusion barrier spacer to form a thermal oxidation layer from the oxide layer that continuously extends from beneath the oxygen diffusion barrier layer to beneath the floating gate. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
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Specification