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Flash NVROM devices with UV charge immunity

  • US 6,969,654 B1
  • Filed: 11/28/2000
  • Issued: 11/29/2005
  • Est. Priority Date: 06/19/2000
  • Status: Expired due to Term
First Claim
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1. A method of fabricating a flash nonvolatile read-only memory (NVROM) semiconductor device having ultraviolet (UV) charge immunity, the method comprising:

  • providing a semiconductor substrate;

    forming an oxide-nitride-oxide (ONO) layer on the semiconductor substrate;

    forming at least one control gate on the ONO layer;

    forming a first high temperature oxide (HTO) layer over the at least one control gate and the ONO layer;

    forming a UV blocking layer over the first HTO layer;

    forming a second HTO layer over the UV blocking layer; and

    forming a borophosphosilicate (BPSG) interlayer dielectric (ILD) layer over the second HTO layer;

    wherein the UV blocking layer substantially prevents UV light from reaching a nitride layer of the ONO layer.

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