Semiconductor device
First Claim
1. A semiconductor device comprising:
- a semiconductor substrate of a first conductivity type, which has a first major surface and a second major surface;
a lightly-doped semiconductor layer of the first conductivity type, which is formed on the first major surface of the semiconductor substrate;
a first semiconductor region of the first conductivity type, which is formed on a top of an island-shaped region on a surface of the lightly-doped semiconductor layer;
a first electrode, which surrounds the first semiconductor region and is buried in the lightly-doped semiconductor layer to a deeper position than the first semiconductor region;
a second semiconductor region which is formed on the second major surface of the semiconductor substrate;
a buried field relaxation layer which is formed in the lightly-doped semiconductor layer between a bottom surface of the first electrode and the second semiconductor region, the buried field relaxation layer including a first field relaxation layer of the second conductivity type and second field relaxation layers of the first conductivity type formed at two ends of the first field relaxation layer;
a second electrode which is formed on the first semiconductor region on the first major surface; and
a third electrode which is formed on the second semiconductor region on the second major surface.
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Accused Products
Abstract
A semiconductor device includes a semiconductor substrate of a first conductivity type, a lightly-doped semiconductor layer of the first conductivity type formed on the first major surface of the substrate, a first semiconductor region of the first conductivity type formed on an island-shaped region on the lightly-doped semiconductor layer, a first electrode surrounding the first semiconductor region and buried at a deeper position than the first semiconductor region, a second semiconductor region formed on the second major surface of the substrate, a buried field relaxation layer formed in the lightly-doped semiconductor layer between a bottom surface of the first electrode and the second semiconductor region, including a first field relaxation layer of the first conductivity type and second field relaxation layers of the second conductivity type formed at two ends of the first field relaxation layer, second and third electrodes formed on the first and second semiconductor regions, respectively.
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Citations
20 Claims
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1. A semiconductor device comprising:
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a semiconductor substrate of a first conductivity type, which has a first major surface and a second major surface; a lightly-doped semiconductor layer of the first conductivity type, which is formed on the first major surface of the semiconductor substrate; a first semiconductor region of the first conductivity type, which is formed on a top of an island-shaped region on a surface of the lightly-doped semiconductor layer; a first electrode, which surrounds the first semiconductor region and is buried in the lightly-doped semiconductor layer to a deeper position than the first semiconductor region; a second semiconductor region which is formed on the second major surface of the semiconductor substrate; a buried field relaxation layer which is formed in the lightly-doped semiconductor layer between a bottom surface of the first electrode and the second semiconductor region, the buried field relaxation layer including a first field relaxation layer of the second conductivity type and second field relaxation layers of the first conductivity type formed at two ends of the first field relaxation layer; a second electrode which is formed on the first semiconductor region on the first major surface; and a third electrode which is formed on the second semiconductor region on the second major surface. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A semiconductor device comprising:
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a semiconductor substrate of a first conductivity type, which has a first major surface and a second major surface; a first lightly-doped semiconductor layer of the first conductivity type, which is formed on the first major surface of the semiconductor substrate; a second lightly-doped semiconductor layer of the first conductivity type, which is formed on the first lightly-doped semiconductor layer; a third lightly-doped semiconductor layer of the first conductivity type, which is formed on the second lightly-doped semiconductor layer; a first semiconductor region of the first conductivity type, which is formed on a top of an island-shaped region on a surface of the third lightly-doped semiconductor layer; a first electrode which surrounds the first semiconductor region and is buried to a deeper position than the first semiconductor region so as to extend through the third lightly-doped semiconductor layer; a second semiconductor region which is formed on the second major surface of the semiconductor substrate; a buried field relaxation layer which is formed in the second lightly-doped semiconductor layer, the buried field relaxation layer including a first field relaxation layer of the second conductivity type and second field relaxation layers of the first conductivity type formed at two ends of the first field relaxation layer; a second electrode which is formed on the first semiconductor region on the first major surface; and a third electrode which is formed on the second semiconductor region on the second major surface. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20)
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Specification