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Metal etch process selective to metallic insulating materials

  • US 6,972,265 B1
  • Filed: 04/15/2002
  • Issued: 12/06/2005
  • Est. Priority Date: 04/15/2002
  • Status: Expired due to Fees
First Claim
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1. A method for processing a semiconductor topography, comprising:

  • depositing a tunneling layer above one or more underlying magnetic layers;

    depositing one or more overlying magnetic layers above the tunneling layer;

    patterning the one or more overlying magnetic layers with an etch chemistry comprising HBr to form an upper portion of a magnetic cell junction; and

    terminating the step of patterning upon exposing the tunneling layer.

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