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Integrated circuit and method for its manufacture

  • US 6,972,478 B1
  • Filed: 03/07/2005
  • Issued: 12/06/2005
  • Est. Priority Date: 03/07/2005
  • Status: Expired due to Fees
First Claim
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1. An integrated circuit comprising:

  • a bulk silicon substrate comprising a first region having <

    100>

    orientation, and a second region having <

    110>

    orientation;

    a layer of silicon on insulator overlying a portion of the bulk silicon substrate;

    at least one field effect transistor formed in the layer of silicon on insulator;

    at least one P-channel field effect transistor formed in the second region; and

    at least one N-channel field effect transistor formed in the first region.

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