Semiconductor pressure sensor having diaphragm
First Claim
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1. A semiconductor pressure sensor comprising:
- a semiconductor substrate having a diaphragm for receiving pressure and a bridge circuit for detecting distortion of the diaphragm corresponding to the pressure, wherein the bridge circuit includes a pair of first a pair of second gauge resistors, wherein the first gauge resistors are disposed on a center gauge resistors and of the diaphragm, and the second gauge resistors are disposed on a periphery of wherein the diaphragm, and each first gauge resistor has a first resistance, which is larger than a second resistance of each second gauge resistor,wherein the bridge circuit has a predetermined ratio of resistance between the second resistance and the first resistance,wherein the diaphragm has another predetermined ratio of thermal stress between a second thermal stress to be applied to the second gauge resistor and a first thermal stress to be applied to the first gauge resistor in a case where a thermal stress is applied to the substrate, andwherein the predetermined ratio of resistance is equal to the predetermined ratio of thermal stress.
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Abstract
A semiconductor pressure sensor includes a semiconductor substrate having a diaphragm for receiving pressure and a bridge circuit for detecting a distortion of the diaphragm corresponding to the pressure. The bridge circuit includes a pair of first gauge resistors and a pair of second gauge resistors. The first gauge resistors are disposed on a center of the diaphragm, and the second gauge resistors are disposed on a periphery of the diaphragm. Each first gauge resistor has a first resistance, which is larger than a second resistance of each second gauge resistor. The TNO property of the sensor is improved, so that the sensor has high detection accuracy.
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12 Claims
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1. A semiconductor pressure sensor comprising:
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a semiconductor substrate having a diaphragm for receiving pressure and a bridge circuit for detecting distortion of the diaphragm corresponding to the pressure, wherein the bridge circuit includes a pair of first a pair of second gauge resistors, wherein the first gauge resistors are disposed on a center gauge resistors and of the diaphragm, and the second gauge resistors are disposed on a periphery of wherein the diaphragm, and each first gauge resistor has a first resistance, which is larger than a second resistance of each second gauge resistor, wherein the bridge circuit has a predetermined ratio of resistance between the second resistance and the first resistance, wherein the diaphragm has another predetermined ratio of thermal stress between a second thermal stress to be applied to the second gauge resistor and a first thermal stress to be applied to the first gauge resistor in a case where a thermal stress is applied to the substrate, and wherein the predetermined ratio of resistance is equal to the predetermined ratio of thermal stress. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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