Method for making a semiconductor device having a metal gate electrode

• US 6,974,764 B2
• Filed: 11/06/2003
• Issued: 12/13/2005
• Est. Priority Date: 11/06/2003
• Status: Active Grant

• Current Assignee: Tahoe Research Limited (f/k/a Learndale Limited) (Vector Capital Corporation)
• Original Assignee: Intel Corporation
• Inventors: Shah, Uday, Chau, Robert S., Doczy, Mark L., Kavalieros, Jack, Brask, Justin K., Metz, Matthew V., Turkot, Robert B. Jr.
• Primary Examiner(s): Picardat, Kevin M.
• Application Number:
  US10/704,497
• Publication Number:
  US 20050101113A1
• Time in Patent Office: 768 Days
• Field of Search: 438/199, 438/216, 438/233, 438/287, 438/585, 438/587, 438/591
• US Class Current: 438/585
• CPC Class Codes: H01L 21/28079 the final conductor layer next to the insulator being a single metal, e.g. Ta, W, Mo, Al
• CPC Class Codes: H01L 21/32134 by liquid etching only
• CPC Class Codes: H01L 21/823842 gate conductors with different gate conductor materials or different gate conductor implants, e.g. dual gate structures
• CPC Class Codes: H01L 29/4958 with a multiple layer structure

Claims