Source side self boosting technique for non-volatile memory
First Claim
1. A method of programming a memory system, comprising:
- performing first boosting of a voltage potential of a source side channel region of a first set of non-volatile storage elements which includes, a non-volatile storage element to be inhibited, the first boosting is performed prior to applying a program voltage to the non-volatile storage element to be inhibited and a non-volatile storage element selected for programming, the first boosting comprises applying a first voltage to control gates for a source side neighbor and source side non-neighbors of the non-volatile storage element to be inhibited; and
performing second boosting of the voltage potential, during the applying of the program voltage, by applying a second voltage, which is greater than the first voltage, to the source side non-neighbors.
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Accused Products
Abstract
A non-volatile semiconductor memory system (or other type of memory system) is programmed in a manner that avoids program disturb. In one embodiment that includes a flash memory system using a NAND architecture, program disturb is avoided by increasing the channel potential of the source side of the NAND string during the programming process. One exemplar implementation includes applying a voltage (e.g. Vdd) to the source contact and turning on the source side select transistor for the NAND sting corresponding to the cell being inhibited. Another implementation includes applying a pre-charging voltage to the unselected word lines of the NAND string corresponding to the cell being inhibited prior to applying the program voltage.
104 Citations
38 Claims
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1. A method of programming a memory system, comprising:
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performing first boosting of a voltage potential of a source side channel region of a first set of non-volatile storage elements which includes, a non-volatile storage element to be inhibited, the first boosting is performed prior to applying a program voltage to the non-volatile storage element to be inhibited and a non-volatile storage element selected for programming, the first boosting comprises applying a first voltage to control gates for a source side neighbor and source side non-neighbors of the non-volatile storage element to be inhibited; and performing second boosting of the voltage potential, during the applying of the program voltage, by applying a second voltage, which is greater than the first voltage, to the source side non-neighbors. - View Dependent Claims (2, 3, 4, 5)
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6. A memory system, comprising:
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a first set of non-volatile storage elements, which includes a non-volatile storage element selected for programming; a second set of non-volatile storage elements, which includes a non-volatile storage element to be inhibited, a source side neighbor and source side non-neighbors of the non-volatile storage element to be inhibited; and one or more managing circuits in communication with the non-volatile storage elements, the one or more managing circuits receive a request to program data, and, responsive to the request;
(a) perform first boosting of a voltage potential of a source side channel region of the second set of non-volatile storage elements, the first boosting is performed prior to applying a program voltage to the non-volatile storage element to be inhibited and the non-volatile storage element selected for programming, the first boosting comprises applying a first voltage to control gates for the source side neighbor and the source side non-neighbors, and (b) perform second boosting of the voltage potential, during the applying of the program voltage, by applying a second voltage, which is greater than the first voltage, to the source side non-neighbors. - View Dependent Claims (7, 8, 9, 10)
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11. A method of programming a memory system, comprising:
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performing first boosting of a voltage potential of a source side channel region of a first set of non-volatile storage elements which includes a non-volatile storage element to be inhibited, the first boosting is performed prior to applying a program voltage to the non-volatile storage element to be inhibited and a non-volatile storage element selected for programming, the first boosting comprises applying a first voltage to control gates for a source side neighbor and source side non-neighbors of the non-volatile storage element to be inhibited; following the first boosting and preceding the applying of the program voltage, applying a lower voltage than the first voltage to the control gates for the source side non-neighbors; and performing second boosting of the voltage potential, during the applying of the program voltage, by applying a second voltage, which is greater than the first voltage, to the source side non-neighbors. - View Dependent Claims (12, 13, 14)
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15. A memory system, comprising:
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a first set of non-volatile storage elements, which includes a non-volatile storage element selected for programming; a second set of non-volatile storage elements, which includes a non-volatile storage element to be inhibited, a source side neighbor and source side non-neighbors of the non-volatile storage element to be inhibited; and one or more managing circuits in communication with the non-volatile storage elements, the one or more managing circuits receive a request to program data, and, responsive to the request;
(a) perform first boosting of a voltage potential of a source side channel region of the second set of non-volatile storage elements, the first boosting is performed prior to applying a program voltage to the non-volatile storage element to be inhibited and the non-volatile storage element selected for programming, the first boosting comprises applying a first voltage to control gates for the source side neighbor and the source side non-neighbors, (b) following the first boosting and preceding the applying of the program voltage, apply a lower voltage than the first voltage to the control gates for the source side non-neighbors, and (c) perform second boosting of the voltage potential, during the applying of the program voltage, by applying a second voltage, which is greater than the first voltage, to the source side non-neighbors. - View Dependent Claims (16, 17, 18)
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19. A method of programming a memory system, comprising:
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performing first boosting of a voltage potential of a source side channel region of a first set of non-volatile storage elements which includes a non-volatile storage element to be inhibited, the first boosting is performed prior to applying a program voltage to the non-volatile storage element to be inhibited and a non-volatile storage element selected for programming, the first boosting comprises applying a first voltage to control gates for source side non-neighbors of the non-volatile storage element to be inhibited, applying a lower voltage than the first voltage to a control gate of the source side neighbor, and maintaining the first set of non-volatile storage elements in communication with a source line; and performing second boosting of the voltage potential, during the applying of the program voltage, by applying a second voltage, which is greater than the first voltage, to the source side non-neighbors, and maintaining the first set of non-volatile storage elements out of communication with the source line. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26, 27, 28)
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29. A memory system, comprising:
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a first set of non-volatile storage elements, which includes a non-volatile storage element selected for programming; a second set of non-volatile storage elements, which includes a non-volatile storage element to be inhibited, a source side neighbor and source side non-neighbors of the non-volatile storage element to be inhibited; and one or more managing circuits in communication with the non-volatile storage elements, the one or more managing circuits receive a request to program data, and, responsive to the request;
(a) perform first boosting of a voltage potential of a source side channel region of the second set of non-volatile storage elements, the first boosting is performed prior to applying a program voltage to the non-volatile storage element to be inhibited and the non-volatile storage element selected for programming, the first boosting comprises applying a first voltage to control gates for the source side non-neighbor, applying a lower voltage than the first voltage to a control gate of the source side neighbor, and maintaining the second set of non-volatile storage elements in communication with a source line, and (b) perform second boosting of the voltage potential, during the applying of the program voltage, by applying a second voltage, which is greater than the first voltage, to the source side non-neighbors, and maintaining the second set of non-volatile storage elements out of communication with the source line. - View Dependent Claims (30, 31, 32, 33, 34, 35, 36, 37, 38)
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Specification