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Analysis method for semiconductor device, analysis system and a computer program product

  • US 6,975,953 B2
  • Filed: 02/25/2004
  • Issued: 12/13/2005
  • Est. Priority Date: 02/25/2003
  • Status: Expired due to Fees
First Claim
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1. An analysis method for a semiconductor device, comprising:

  • measuring electrical characteristics of a plurality of test element groups fabricated on a semiconductor substrate;

    classifying the test element groups into a first test element group category where a systematic failure has not occurred and a second test element group category where the systematic failure has occurred based on the electrical characteristics;

    creating a first comparison Mahalanobis reference space using first parameters of the test element groups in the first test element group category from among parameters of the test element groups expressed as numerical values;

    calculating a first comparison Mahalanobis distance of the first parameters and a second comparison Mahalanobis distance of second parameters of the test element groups in the second test element group category by using the first comparison Mahalanobis reference space; and

    comparing the first and second comparison Mahalanobis distances.

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