Analysis method for semiconductor device, analysis system and a computer program product
First Claim
1. An analysis method for a semiconductor device, comprising:
- measuring electrical characteristics of a plurality of test element groups fabricated on a semiconductor substrate;
classifying the test element groups into a first test element group category where a systematic failure has not occurred and a second test element group category where the systematic failure has occurred based on the electrical characteristics;
creating a first comparison Mahalanobis reference space using first parameters of the test element groups in the first test element group category from among parameters of the test element groups expressed as numerical values;
calculating a first comparison Mahalanobis distance of the first parameters and a second comparison Mahalanobis distance of second parameters of the test element groups in the second test element group category by using the first comparison Mahalanobis reference space; and
comparing the first and second comparison Mahalanobis distances.
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Abstract
An analysis method for a semiconductor device includes measuring electrical characteristics of TEGs fabricated on a semiconductor substrate; classifying the TEGs into a first TEG category where a systematic failure has not occurred and a second TEG category where the systematic failure has occurred based on the electrical characteristics; creating a first comparison Mahalanobis reference space using first parameters of the TEGs in the first TEG category from among parameters of the TEGs expressed as numerical values; calculating a first comparison Mahalanobis distance of the first parameters and a second comparison Mahalanobis distance of second parameters of the TEGs in the second TEG category by using the first comparison Mahalanobis reference space; and comparing the first and second comparison Mahalanobis distances.
9 Citations
20 Claims
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1. An analysis method for a semiconductor device, comprising:
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measuring electrical characteristics of a plurality of test element groups fabricated on a semiconductor substrate; classifying the test element groups into a first test element group category where a systematic failure has not occurred and a second test element group category where the systematic failure has occurred based on the electrical characteristics; creating a first comparison Mahalanobis reference space using first parameters of the test element groups in the first test element group category from among parameters of the test element groups expressed as numerical values; calculating a first comparison Mahalanobis distance of the first parameters and a second comparison Mahalanobis distance of second parameters of the test element groups in the second test element group category by using the first comparison Mahalanobis reference space; and comparing the first and second comparison Mahalanobis distances. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. An analysis system, comprising:
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a failure classification module configured to classify test element groups into a first test element group category where a systematic failure has not occurred and a second test element group category where the systematic failure has occurred based on measurement results of electrical characteristics of the test element groups; and a statistical analysis module configured to create a first comparison Mahalanobis reference space using first parameters of the test element groups in the first test element group category from among parameters of the test element groups expressed as numerical values, and to calculate a first comparison Mahalanobis distance of the first parameters and a second comparison Mahalanobis distance of second parameters of the test element groups in the second test element group category by using the first comparison Mahalanobis reference space, so as to compare the first and second comparison Mahalanobis distances. - View Dependent Claims (12, 13, 14, 15, 16)
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17. A computer program product configured to be executed by a computer, comprising:
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an instruction of classifying test element groups into a first test element group category where a systematic failure has not occurred and a second test element group category where the systematic failure has occurred based on measurement results of electrical characteristics of the test element groups; an instruction of creating a first comparison Mahalanobis reference space using first parameters of the test element groups in the first test element group category from among parameters of the test element groups expressed as numerical values; and an instruction of calculating a first comparison Mahalanobis distance of the first parameters and a second comparison Mahalanobis distance of second parameters of the test element groups in the second test element group category by using the first comparison Mahalanobis reference space so as to compare the first and second comparison Mahalanobis distances. - View Dependent Claims (18, 19, 20)
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Specification