Micro-electromechanical switch fabricated by simultaneous formation of a resistor and bottom electrode
First Claim
1. A method to form a RF switch by integrating a resistor in circuit with a bottom electrode of a micro-electromechanical switch on a substrate, said method comprising the steps of:
- depositing a uniform layer of a resistor material over at least one side of said substrate;
depositing a uniform layer of a hard masked material over said resistor material;
depositing a uniform layer of a metal material over said hard mask material,wherein said deposited layers form a stack;
patterning and etching said bottom electrode of said micro-electromechanical switch and resistor lengths from said stack; and
etching said hard mask and metal material from said patterned resistor length to form said RF switch.
0 Assignments
0 Petitions
Accused Products
Abstract
The present invention provides a method and product-by-method of integrating a bias resistor in circuit with a bottom electrode of a micro-electromechanical switch on a silicon substrate. The resistor and bottom electrode are formed simultaneously by first sequentially depositing a layer of a resistor material (320), a hard mask material (330) and a metal material (340) on a silicon substrate forming a stack. The bottom electrode and resistor lengths are subsequently patterned and etched (350) followed by a second etching (360) process to remove the hard mask and metal materials from the defined resistor length. Finally, in a preferred embodiment, the bottom electrode and resistor structure is encapsulated with a layer of dielectric which is patterned and etched (370) to correspond to the defined bottom electrode and resistor.
7 Citations
9 Claims
-
1. A method to form a RF switch by integrating a resistor in circuit with a bottom electrode of a micro-electromechanical switch on a substrate, said method comprising the steps of:
-
depositing a uniform layer of a resistor material over at least one side of said substrate; depositing a uniform layer of a hard masked material over said resistor material; depositing a uniform layer of a metal material over said hard mask material, wherein said deposited layers form a stack; patterning and etching said bottom electrode of said micro-electromechanical switch and resistor lengths from said stack; and etching said hard mask and metal material from said patterned resistor length to form said RF switch. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
-
Specification